 |
|
||||||||||||||||||
 |
 |
|
|
|
advertisement |
|
|
|
|
 Amplifiers Feb 1, 2007 12:00 PM
Click here for the enhanced PDF version of this article SiGe power amplifier
The MAAP-008015 amplifier from M/A-COM, a business unit of Tyco Electronics, is a 2.4 GHz linear power amplifier for 802.11b/g multiple-input multiple-output (MIMO) WLAN applications that require high gain, high efficiency and small size. The amplifier provides 20 dBm of linear output power with EVM < 3.0%, maximizing system performance while maintaining low dc power consumption. The three-stage power amplifier is designed for linear 802.11b/g applications and is available in a 3 mm 12-lead PQFN plastic package. The power amplifier features an integrated power detector for accurate power control and a separate power mode pin for current savings in the power shutdown mode state. For 802.11g applications, the power amplifier is designed to generate 16 dBm of linear output power (OFDM, QAM-64, 54 Mbps) while drawing only 65 mA and maintaining an EVM of <3.0%. For 802.11b applications, the device is designed to generate up to 20 dBm of linear output power while consuming only 100 mA. The MAAP-008015 has a typical linear gain of 31 dB at an operating voltage of 3.3 V. The MAAP-008015 is available and is priced at $0.35 in quantities of 100K. RFID reader amplifier
M/A-COM has introduced the MAAP-007649-000100, a 2 W power amplifier for the 800 MHz to 1000 MHz frequency band. The amplifier is optimized for RFID reader applications with greater than 1 W dense reader mode (DRM) spectral mask linearity, and a flat gain response. Typical performance of the amplifier at 900 MHz is 19 dB gain, 34 dBm P1dB and 49 dBm output IP3. The device also features good adjacent-channel power ratio (ACPR) linearity performance for cellular infrastructure standards. The amplifier requires a single +7.5 Vdc supply, in addition to a +4.5 V reference pin for power down and power control capability. It is available in a 4 mm × 4 mm 16-lead PQFN surface-mount packaging. The MAAP-007649-000100 is available. Pricing is $4.94 in quantities of 10,000. Broadband amplifiers
The model AMP2G18-28 from Amplical covers the frequency range of 2 GHz to 18 GHz with a nominal gain of 28 dB. Gain flatness is better than ±2 dB with typical values of ±1.5 dB. Noise figure is better than 4 dB with midband values of below 3 dB typical. This amplifier features a P1dB of at least +10 dBm and VSWR is typically better than 2.0:1. The AMP2G18-28 uses the latest in microwave semiconductor technology resulting in an integrated and economical high-performance solution. The AMP2G18-28 is equipped with SMA(f) input and output connectors and draws less than 150 mA in dc current. Input voltage is 15 V, with internal regulation. Units with additional gain and other frequencies and specifications are available. General-purpose RF amplifiers
Four general-purpose broadband RF amplifiers from Freescale Semiconductor, the MMH3111N, MMG3014N, MMG3015N and MMG3016N, deliver high gain and linearity over bandwidths from dc up to 6 GHz. The amplifiers are suited for applications ranging from WiMAX base stations to RFID readers. Freescale's portfolio of general-purpose amplifiers comprises 17 distinct devices and includes heterojunction field effect transistors (HFETs) for greater ruggedness and higher linearity for the general-purpose market. These indium-gallium-phosphide (InGaP) devices feature active biasing technology. Active biasing reduces performance variation due to temperature and supply-voltage variations and provides ease-of-use for system designers. The MMH3111N operates from 250 MHz to 3 GHz, having 21.5 dBm P1dB output power and 11.5 dB gain at 2140 MHz. The MMG3014N operates from dc to 4 GHz, having 24 dBm P1dB output power and 20 dB gain at 900 MHz. The MMG3015N operates from dc to 6 GHz, having 21 dBm P1dB output power and 15.5 dB gain at 900 MHz. The MMG3016N operates from dc to 4 GHz, having 24 P1dB dBm output power and 15 dB of gain at 900 MHz. All devices are InGaP, except for the MMH3111N, which is a GaAs device. The MMH3111N and MMG3016N feature HFET devices, while the MMG3014N and MMG3015N have HBTs. All four devices are housed in cost-effective plastic SOT-89 packages with a moisture sensitivity level (MSL) rating of 1 at a 260 °C peak package temperature. The devices feature inherently low thermal resistance and low junction temperatures. They operate directly from a single 5 V bias supply. Samples of the MMG3014N and MMG3016N are expected in March with production planned for May. Samples of the MMH3111N are planned for this month and production is scheduled for June. Freescale expects to be in volume production on the MMG3015N this month. InGaP ISM band LNA
NEC's UPG2310TK InGaP LNA MMIC suits antenna modules for satellite radio receivers is an ideal LNA for the 2.4 GHz to 2.5 GHz ISM band. The LNA provides high-gain, a low noise figure, and high intercept point in a 1.5 mm × 1.3 mm × 0.55 mm “TK” package. The 3.0 V LNA is designed to replace two stages of discrete devices. Key specifications (typical) at 2.34 GHz include gain or 27 dB, noise figure of 1.8 dB, and output IP3 of +28.5 dBm and current consumption of 30 mA. The UPG2310TK is in production; samples are available from California Eastern Laboratories. Low-noise amplifiers
NuWaves Engineering's HILNA CF amplifier is designed to allow end users the ability to select their own unique custom filter (low-pass, high-pass, bandpass or band-reject) for the low-noise, high-gain, high-linearity broadband amplifier. This amplifier-filter combination is custom designed to the end user's application, providing the capability to reject interfering signals across a selected frequency band. The uHILNA amplifier with its micro size (outside dimensions: 1.00 in. × 0.75 in. × 0.50 in.) and lightweight features is ideal for system integrators where footprint size is a determining factor. The uHILNA is available for shipment. Selectable-gain amplifiers
Microchip Technology has introduced the MCP6G01, MCP6G02, MCP6G03 and MCP6G04 (MCP6G0x), which are amplifiers with a gain-select pin in place of a negative-input-pin, enabling digital gain control for better system accuracy and dynamic range. The amplifiers can be used as drop-in replacements for op-amps, as microcontroller-controlled amplifiers or as stand-alone gain blocks and eliminate the need for external resistors. The MCP6G0x amplifiers feature a voltage operation range of 1.8 V to 5.5 V, quiescent current of 110 A and a bandwidth of 350 kHz for a gain of 10, 250 kHz for a gain of 50 and 900 kHz at unity gain. With less than 1% gain error, they have lower gain error than traditional op-amp solutions that use expensive 1% precision resistors. The devices enable designers to select gains of 1, 10 or 50 simply by driving the gain-input pin to the high, low or high-Z state. Additionally, the amplifiers adjust internal compensation when higher gain is selected, providing greater bandwidth at a lower current. The MCP6G01, MCP6G02 and MCP6G03 are available in eight-pin MSOP or SOIC packages, and the MCP6G04 is available in 14-pin TSSOP and SOIC packages. The MCP6G01 (single) and MCP6G03 (single with chip select) are priced at $0.34 each, the MCP6G02 (dual) at $0.43 each, and the MCP6G04 (quad) at $0.70 each, all in 10,000-unit quantities. Samples are also available. Current sense amplifiers
Linear Technology's LTC6103 contains two independent, high-side current sense amplifiers with exceptional precision and response time. The LTC6103 is crafted for multiple current-sensing applications such as H-bridge driver circuits. The unique topology allows the second amplifier to be used for bidirectional operation, high/low current ranging or high-voltage level translation. The LTC6103 features include input bias current of 170 nA (max) and the maximum input offset voltage of 450 µV. This precision performance allows the part to resolve very small currents and still operate over a large dynamic range. The LTC6103 can withstand voltages up to 70 V, a valuable feature when power supply failures or catastrophic load changes can lead to voltage flyback conditions. With a response time of 1 µs, the LTC6103 is designed for automatic power shutdown when sensing fault conditions. Other features include maximum output current of 1 mA, 110 dB minimum PSRR, and a typical 275 µA supply current per amplifier. Operating temperature range is -40 °C to 125 °C. It comes in a MSOP8 package. Gain for each device is set by two resistors and since the gain resistors are the primary determinants of accuracy, precision resistors allow for accuracy better than 1%. LTC6103 is in production, with prices starting at $1.66 each in 1000-piece quantities. Bluetooth/ZigBee PA
As available battery voltages drop, Bluetooth and ZigBee designers will be looking for Class 1 power amplifier (PA) ICs that run on lower voltages without sacrificing output power. With high output power in a miniature package, NEC's UPG2250T5N GaAs PA is an ideal candidate. Designed to run on supply voltages of 1.8 V to 3.0 V, the UPG2250T5N delivers more than +19 dBm output power with up to 60% efficiency at 1.8 V supply and control voltage. At 3.0 V, it delivers +25 dBm output power. Additionally, its 1.5 mm × 1.5 mm × 0.37 mm package requires little real estate, and offers simple six-pin pinout to ease implementation. Typical key specifications include an operating frequency range of 2.4 GHz to 2.5 GHz, and circuit current of 100 mA at +19 dBm P Available from California Eastern Labs, the UPG2250T5N can be integrated with NEC low-voltage switch ICs for designs that require switched outputs. To help speed circuit design, evaluation boards will be available through CEL sales offices or Mouser Electronics. MMIC amplifiers
Mini-Circuits' new family of ‘LEE’ MMIC amplifiers are highly reliable, extremely broad band, and very low in cost. These amplifiers have excellent electrical performance, with up to 17.3 dBm flat output power to 10 GHz. There are five models being introduced in this new Mini-Circuits family. Housed in a leadless 3 mm × 3 mm low-profile (MCLPTM) package with exposed metal bottom for superior grounding and heat dissipation. They're suitable for the cellular, PCS, communication receivers and transmitters as well as for satellite communication and military applications. Pricing starts at $1.19 each, in quantities of 25. SiGe power transistor
Renesas Technology America's RQG2003 is a high-performance power SiGe HBT for operation at 2.4 GHz and 5 GHz. In IEEE 802.11 a/b/g wireless LAN routers/terminals, RF tag readers/writers, digital cordless phones, and similar products, this power transistor can eliminate the power amplifier modules and MMICs used to drive the transmitting antenna. As a result, it allows engineers to design systems that consume less power, are smaller, and cost less to build. At 5.8 GHz, for example, the SiGe device has a power gain of 6.4 dB, a 1 dB gain compression power of 26.5 dBm, and a power- added efficiency of 33.6%. At 2.4 GHz, it provides a power gain of 13.0 dB, a 1 dB gain compression power of 26.5 dBm, and a power addition efficiency of 66%. The RF power transistor is built with a SiGeC process, in which a SiGe base is doped with carbon, and has an optimized transistor pattern. These techniques have increased the collector current density and improved the 1 dB gain compression power by approximately 1.5 dBm compared with the HSG2002 device. The RQG2003 uses an optimal silver paste to achieve high reliability and conductivity for die bonding. The RQG2003 is available in the 8-pin WQFN0202 package.
|
|
|
|
|
|
||||||||||||||
| Back to Top |
|
popular searches: zigbee | quadrature modulation | OFDM | WiMAX |