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 Amplifiers Jul 1, 2007 12:00 PM
Click here for the enhanced PDF version of this article 1700-2700 MHz, 5 W amplifier GaN-on-Si transistors
The NPT25190 and NPT25240 from Nitronex are 48 V GaN-on-silicon devices designed for WiMAX and 3G/3G LTE waveforms operating in frequency bands of 2.3 GHz to 2.7 GHz. Typical performance is rated using a mobile WiMAX waveform defined as a single-carrier OFDM signal 64 QAM ¾, 8 burst, 7 MHz channel bandwidth, 10.3 dB PAR at 0.01% probability on CCDF. Under these test conditions, the NPT25190 will deliver 15 dB of gain (typical), 22% efficiency, and less than 2.5% EVM at greater than 24 W of power at elevated flange temperatures (above 95 °C) required by next-generation systems. The NPT25190 is rated for 190 W typical P3dB at 2.6 GHz. The NPT25240 is rated for 240 W typical P3dB at 2.6 GHz. Breakdown voltage for both devices is greater than 200 V. The availability is for initial samples in the third quarter and production quantities in the fourth quarter. GaN power transistors
RF Micro Devices' (RFMD) RF393X family of 48 V gallium nitride (GaN) power transistors support the power range of 10 W to 120 W and wide tunable bandwidth. The family is comprised of five 48 V GaN unmatched power transistors, each of which deliver gain in the range of 14 dB to 16 dB and high peak drain efficiency of greater than 65% at 2.1 GHz. The power transistors are ideal for wideband, high-efficiency power amplifier applications, such as broadcast television, wireless infrastructure, high-power radar, aerospace and avionics. RFMD is developing three families of high-voltage GaN products. In addition to GaN power transistors, the company is developing high-power GaN RF integrated circuits (RFICs) and high-power GaN matched transistors. The high-power GaN RFICs are fully matched high-power amplifiers that deliver high efficiency over multiple octaves of bandwidth and are suitable for applications such as military communications, public mobile radio and software-definable radios (SDRs). The high-power GaN matched transistors include internal matching elements to improve impedance and efficiency and are suitable for applications such as high-power radar and infrastructure for WCDMA and WiMAX. Linear 5 W PA
The SM2040-37 from Stealth Microwave is a small, highly linear amplifier designed for laboratory use as well as military and wireless applications. Operating from 2 GHz to 4 GHz, the amplifier is suited for UMTS, ISM, MMDS, and WLL applications. Output power at P1dB is +37 dBm (min.) with a +47 dBm (min.) OIP3. Linear gain is 37 dB with ± 0.75 dB flatness across the entire frequency band. The unit operates from +12 V, consuming 2.9 A. Versions that support +10 V operation are also available. Dimensions are 5.0 in. × 2.5 in. × 0.563 in. Features include mismatch protection, single power supply operation, overvoltage protection, thermal protection with auto reset, and logic on/off control. The module is also available as a lab unit or in 19-inch rack-mountable form. Base station Pas
Anadigics' ZeroIC power amplifiers (Pas) are compatible with 3G reference designs based on the RTR6500 and second-generation QSC family of single-chip solution products from QUALCOMM. The ZeroIC components deliver good operating time by cutting overall battery power requirements. They are designed to work with the QUALCOMM RTR6500 transceiver, and with second-generation QUALCOMM single-chip (QSC) solutions, which integrate the CDMA2000 1X radio transceiver, baseband modem, power management, and multimedia engines into a single chip. The ZeroIC product family includes: the AWT6331 for 800 MHz (U.S. cellular, band class 0); the AWT6332 for 1900 MHz band (PCS, band classes 1 and 14); the AWT6334 for 900 MHz (Japan cellular, band class 3); the AWT6335 for 2100 MHz (IMT, band class 6); and the AWT6336 for 1700 MHz (AWS, band class 15). In addition to reduced current consumption, the family is packaged in a 3.0 mm × 3.0 mm × 1.0 mm profile. The products also integrate an internal voltage regulator to further reduce space and BOM cost. ZeroIC products use InGaP-Plus process technology that allows designers to integrate previously separate circuit elements on a single die. Broadband PA
Amplical's family of broadband linear medium-power amplifiers use MMIC technology. The model AMP10M2G-35-25 is a 10 MHz to 2 GHz amplifier that features 35 dB nominal gain. The amplifier outputs at least 23 dBm of power with P1dB powers of typically 25 dBm. Current draw is less than 350 mA from +12 Vdc. Typical NF is less than 4 dB. Connectors are SMA(female). This model makes an ideal broadband gain block used in test equipment and other wireless applications. Pricing is $325 each for 10 pieces. Single-chip Pas
TriQuint Semiconductor's two satellite communications (satcom) high-power amplifiers, the TGA4916 and TGA4906, target applications for satellite-based Internet service, data transfer and video uploads/downloads. These high-performance gallium arsenide (GaAs) MMICs were developed to drive the evolution of very small aperture terminal (VSAT) components for ground-station RF systems. The devices use 0.15 ¼m pseudomorphic high electron mobility transistors (pHEMT), with three layers of interconnecting metal on 50 ¼m substrate material. The TGA4916 is a Ka-band device operating from 29 GHz to 31 GHz, and has a power-added efficiency at saturation of greater than 18% at 30 GHz. Saturated output power is 38.5 dBm (7 W). Small signal gain is 21 dB, and typical input/output return loss is greater than 12 dB. The TGA4906 is a half-chip version of the TGA4916 that operates from 28 GHz to 31 GHz, and has a PAE at saturation of greater than 20% at 30 GHz. Saturated output power is 36 dBm (4 W) at 30 GHz. Small signal gain is 24 dB. Logarithmic video amplifiers
Endwave's series of millimeter-wave successive detection log video amplifiers (SDLVAs) are ideal for use in early warning and ELINT receivers, DF radar systems, IFMs and other radar and missile guidance systems. SDLVAs in full and partial band configurations cover the 18 GHz to 40 GHz bandwidth. This includes the ASDA-81826 (18 GHz to 26 GHz), the ASDA-82640 (26 GHz to 40 GHz), and the ASDA-81840 (18 GHz to 40 GHz). These components are derivatives of ALC's 18 GHz to 40 GHz DLVAs, but offer improved sensitivity and increased dynamic range in this advanced SDLVA architecture. For example, typical performance for the ASDA-81840 full-band SDLVA is as follows: tangential signal sensitivity of <-65 dBm at 85 °C (30 MHz video BW); dynamic range of >69 dB, log linearity of <±1.0 dB; frequency flatness of ±1.5 dB; composite accuracy of ±4 dB max. (- 45 °C to 85 °C); rise time of <10 ns; recovery time of µ50 ns; and an input/output VSWR of µ2.5:1. LDMOS RF power transistors
Freescale Semiconductor's seven LDMOS RF power transistors enable WCDMA and CDMA2000 base station transmitters to exploit the potential of the Doherty amplifier architecture. The architecture offers exceptional efficiency but presents design challenges due to conflicting requirements for high efficiency and high linearity. The transistors address these challenges, enabling the creation of base stations that consume less power than those using traditional transistor designs. The devices cover popular cellular, PCS and WCDMA frequencies. The devices include the MRFE6S9205H/HS, rated for 865 MHz to 960 MHz, 58 W average output power, 20 dB gain, 34% efficiency, ACPR of -38 dBc (5 MHz offset, 3.84 MHz channel); the MRFE6S9135H/HS, rated for 865 MHz to 960 MHz, 39 W average output power, 20 dB gain, 34.5% efficiency, ACPR of -38 dBc (5 MHz offset, 3.84 MHz channel). The MRF6S19200H/HS, rated for 1930 MHz to 1990 MHz, 58 W average output power, 17 dB gain, 30% efficiency, ACPR of -38 dBc (5 MHz offset, 3.84 MHz channel); the MRF6S19140HR3/HSR3, rated for 1930 MHz to 1990 MHz, 29 W average output power, 16 dB gain, 27.5% efficiency, ACPR of -51 dBc (885 kHz offset, 30 kHz channel); the MRF7S21170HR3/HSR3, rated for 2110 MHz to 2170 MHz, 50 W average output power, 16 dB gain, 31% efficiency, ACPR of -37 dBc (5 MHz offset, 3.84 MHz channel); the MRF6S21190HR6, rated for 2110 MHz to 2170 MHz, 56 W average output power, 17 dB gain, 30% efficiency, ACPR of -38 dBc (5 MHz offset, 3.84 MHz channel); and the MRF6S21140HR3/HSR3, rated for 2110 MHz to 2170 MHz, 30 W average output power, 15.5 dB gain, 27.5% efficiency, ACPR of -37 dBc (5 MHz offset, 3.84 MHz channel). The devices are sampling. Data sheets and a Doherty reference design are available for evaluation purposes. Low-phase noise amplifiers
Hittite Microwave's broadband, ultralow phase-noise distributed MMIC amplifiers are ideal for military, space, test equipment and fiber-optic applications from 2 GHz to 18 GHz. The HMC606 and HMC606LC5 are GaAs InGaP HBT MMIC distributed amplifiers, which deliver a typical small signal gain of 13.5 dB, and input and output return losses of 20 dB at mid-band. These amplifiers deliver a phase noise performance that represents an improvement over equivalent FET-based distributed amplifiers. Measured with a -1 dBm input signal at 4 GHz, the HMC606 and HMC606LC5 exhibit phase noise performance of -153 dBc/Hz and -157 dBc/Hz at 1 kHz and 10 kHz offset, respectively. With a -2 dBm input signal at 12 GHz, the HMC606 and HMC606LC5 exhibit phase noise of -151 dBc/Hz and -160 dBc/Hz at 1 kHz and 10 kHz offset respectively. The HMC606 and HMC606LC5 offer a mid-band noise figure of 4.5 dB and an output P1dB of +15 dBm, while the self-biased topology consumes 64 mA from a +5 V single supply. The HMC606 and HMC606LC5 are ideal for synthesizer applications, or they may be combined with Hittite's line of frequency multiplier and VCO products to build high-performance LO distribution and multiplication chains. The HMC606LC5 is housed in a 5 mm × 5 mm ceramic leadless surface-mount package. For hybrid MIC and MCM assembly applications, the HMC606 die is available and specified for operation over -55 °C to +85 °C. Die, SMT and evaluation PC boards are available. Fully differential ADC drivers
Linear Technology's LTC6400-20 and LTC6401-20 ADC drivers operate to 1.8 GHz and 1.3 GHz from a single 3 V supply. These fully differential amplifiers include gain setting resistors, simplifying the challenge of driving high-speed ADCs. The LTC6400-20 provides a fixed-gain of 20 dB with -93 dBc third-order intermodulation distortion (IMD3) performance and noise figure of 6.5 dB for a 140 MHz input frequency. At 240 MHz, IMD3 is better than -70 dBc. A V The LTC6401-20 is a lower-power part optimized for lower input frequencies. Consuming 50 mA, the LTC6401-20 maintains the same low-noise performance and -90 dBc distortion performance for input frequencies up to 70 MHz.
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