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 products Jul 1, 2002 12:00 PM 1 W InGaP HBT power amplifier for UNII, WLAN
Hittite Microwave introduces a 5.1 to 5.9 GHz GaAs InGaP heterojunction bipolar transistor (HBT) MMIC power amplifier with +30 dBm P1dB output power and +43 dBm output IP3. The HMC408LP3 is suitable for low-cost UNII PT-PT/multi-PT and 802.11a/HiperLAN wireless local area networks (WLAN) access point applications. The power amplifier provides 20 dB of gain and +32.5 dBm of saturated power at 27% PAE from a single +5.0 V supply. A power down (V SPACE/MILITARY
Dual-output, low-noise synthesizer for SATCOM
Elcom's series DFSS synthesizer offers switching speeds of 30 microseconds. The small, ruggedized package (4.00" × 3.75" × 1.20") is suitable for SATCOM, wireless communication and military applications. To fully satisfy SATCOM dual-conversion architecture, the DFSS unit includes a fixed L band and synthesized RF outputs. The DFSS offers options such as dual-output configuration (to support various transceiver functions) and high-stability integrated OCXO. Ruggedized and field-tested for operations over a wide temperature range, as well as shock and vibration, the synthesizers meet the requirements of IESS 308, Eutelsat and MIL-STD188-146. In addition, its small size (4" × 3.75"), low 1.20" profile construction, and low phase noise, 3 to 6 db better than IESS specifications, make the DFSS series suitable for fixed airborne mobile satcom, wireless communications, VSAT and radar applications. SMA adapter for microwave applications
SV Microwave introduces an SMA adapter for use in microwave applications. The inline blindmate adapter, which mates w/standard SMA, is designed for spring-loaded mounting on racks. The blindmate adapters can be used in the test lab or within a system to enable quick connect/disconnect, more connections per area and alignment without sight. Standard interfaces are in accordance with MIL-STD-348. The company can customize the product to fit specific needs. Specifications at a glance:
AMPLIFIERS
MOSFET RF high-power amplifier modules
Hitachi Semiconductor (America) announces a new line of high-power amplifiers (HPAs), the first such commercial products built using the MOSFET process for code division multiple access (CDMA) phones. Cellular phone designers can now take advantage of the performance characteristics of MOSFETs to develop simpler, more efficient and cheaper CDMA and CDMA2000 handsets. They can use the silicon technology to create improved systems that don't require isolators, and that produce low receiver-band noise for better sensitivity and operate at high efficiency to achieve extended intervals between battery charges. The first MOSFET RF HPAs in the product family are two IS-95(1)-compliant CDMA modules: the PF07102B for 0.8 GHz cellular-band, dual-mode CDMA/AMPS mobile phones and the PF07202B 1.9 GHz PCS CDMA handsets. Other applications for the HPAs include cdma2000 1X RTT systems. The modules provide 24 dB (min.) gain, 28.5 dBm output power (P Power op amp with adjustable precision current limit
Linear Technologies' LT1970 is a ±500 mA power op amp with precise, externally controlled current limiting. Separate control voltages program the sourcing and sinking current limit sense thresholds with 2% accuracy. Output current may be boosted by adding external power transistors. The circuit operates with single or split power supplies from 5 V to 36 V total supply voltage. In normal operation, the input stage supplies and the output stage supplies are connected (VCC to V+ and VEE to V-). To reduce power dissipation, it is possible to power the output stage (V+, V-) from independent, lower-voltage rails. The amplifier is unity-gain stable with a 3.6 MHz gain bandwidth product and slews at 1.6 V/μs. The current limit circuits operate with a 2 MHz response between the VCSRC or VCSNK control inputs and the amplifier output. 50Ω power amplifier for GSM/GPRS handsets
Motorola's model MMM5062 PA module uses the HIIPA packaging technique to provide a 50Ω solution without the need for additional external components. Design of the 50Ω impedance matching network at the output of the die is accomplished with capacitors and inductors, where capacitors are integrated onto the die, and inductors are implemented by wire bonds of variable lengths. The tolerance of the capacitor values, together with the precision of the wire bonding process, allows a matching impedance value with less design variance than can be achieved by using passive components on a traditional radio board. The module supports quad-band applications in the GSM850/900, DCS1800, and PCS1900 frequency bands. It also is engineered for Class 10 GPRS operation. High-gain, three-stage amplifier designs are used for the GSM and DCS/PCS bands. In full quad-band applications, the typical performance for the low frequency band (824 to 915 MHz) is an output power of 35.2 dBm and a power-added efficiency of 53%, with an input power of -1 dBm. The typical performance for the high band (1710 to 1910 MHz) is an output power of 33.8 dBm and a power-added efficiency of 44%, with an input power of +2 dBm. In addition, typical cross-band isolation, or low-band second harmonic level measured at the high-band output, is as low as -28 dBm at maximum power. New series of low-cost amplifier gain blocks
WJ Communications introduces the AG Series of low-cost amplifier gain blocks. The AG302, AG303, AG402, AG403, AG602, and AG603 are the first in a broad family of general-purpose buffer amplifiers that will provide reliability at a low cost. The AG series amplifiers are designed to provide broadband gain at frequencies from DC to 3 GHz. The AG product family will cover many different performance combinations spanning 10 to 20 dB gain, +7 to +19 dBm P1dB, and +20 to +35 dBm OIP3. These devices combine dependable performance and consistent quality and can maintain MTBF values exceeding 100 years at mounting temperatures of +85°C. The AG series consist of Darlington pair amplifiers using InGaP HBT technology and are packaged in various industry-standard, surface-mount packages: SOT-89, SOT-86 and SOT-363. While targeted at telecommunication infrastructure and CATV markets, the AG series will work for other applications within the DC to 3 GHz operating range. They can be directly applied to various current and next-generation wireless technologies such as GSM, CDMA, W-CDMA, UMTS and GPRS. SEMICONDUCTORS/ICs
SiC MESFET RF transistor for radio, cellular apps
Cree Microwave offers a new silicon carbide (SiC) MESFET power transistor product targeted for a variety of wide-bandwidth radio communications and cellular infrastructure applications. The new SiC MESFET product (CRF-22010) is a 48 V, 10 W, Class A transistor with 12 dB of gain at 2.2 GHz. The device has passed initial internal product reliability tests and will begin customer sampling immediately. SiC MESFET devices offer much wider bandwidth performance than silicon (Si) or gallium arsenide (GaAs) due to their much higher impedance for a given power level. This enables a single amplifier to be designed that covers the entire DCS/PCS/UMTS frequency band of 1.8-2.2 GHz. The company has demonstrated a balanced amplifier delivering 22 W across a 400 MHz bandwidth using two of the new CRF-22010 SiC MESFETs. 60 W extended C-Band GaAs FET for SATCOM apps
Toshiba America Electronic Components announces a 60 W internally matched C-Band gallium arsenide field-effect transistor (GaAs FET) designed to support extended C-Band satellite communications. The TIM5964-60SL-251, which operates in the 5.9 to 6.75 GHz range, is targeted for use in solid-state power amplifiers (SSPA) for gateway or earth-station satellite communications (SATCOM), very small aperture terminals (VSAT), and for long-haul, point-to-point terrestrial communications. The device increases the maximum output power of the amplifiers within existing design platforms and allows designers to use a single transistor for all satellite communications designs in the extended C-Band range. FIBER OPTICS
Lowpass filter for SONET/SDH OC-768 apps
TRAK Microwave introduces a new lowpass filter used in fiber optics SONET-SDH (synchronous optical network-synchronous digital hierarchy) OC-768, optical multiservice platforms, metro and long haul transmitter receiver module applications. The filter model 50-009-4000-000, at 30000 MHz 3dB cut-off frequency, offers pulse shaping and a printed filter configuration while maintaining a small size and rugged design. The new filter features absorption as high as 65 GHz, increasing attenuation as high as 100 GHz, group delay variation less than 7 psec as high as 65 GHz, and linear phase deviation less than 8° as high as 43 GHz. EMC/RFI
Slotless, low-profile EMI/RFI shielding gaskets
Tech-Etch offers two new EMI/RFI shielding slotless gaskets which have no fingers. The slotless feature provides a smooth surface that eliminates any possibility for snagging while allowing very high attenuation. They are available in any length up to 16" and in all finishes. Adhesive mounting provides a secure installation with high durability. Featuring a 360± no-snag design, they are suitable for bidirectional applications, require only a low closing force and fill gaps from .03" to .06". Item numbers are LP45 and LP60. SIGNAL PROCESSING
10-1000MHz mixers deliver 50 dB isolation
Mini-Circuits announces the new patent-pending series of ADEX level 4, 7, and 17 (LO) mixers designed to offer high isolation (greater than 50dB typ) with very flat conversion loss (±0.2dB typ) over the entire 10-1000MHz band. LO and RF have excellent matching, typically 15-20dB return loss, and the low-profile 0.112" package is suitable for high density designs. Price is from $2.95 ea. (Qty.10) 12-bit ADC for cable modem services, 3G, other apps
Analog Devices introduces a 12-bit analog-to-digital converter (ADC) capable of encoding at 210 mega samples per second (MSPS). The AD9430 is 68% faster than Analog Devices' AD9433. The company notes it is the first ADC with the precision and speed required to support the next generation of communications and high-end imaging applications. These applications include broadband cable modem head-end systems and 3G radio transceivers, as well as high-data-rate point-to-point radios, medical imaging systems and spectrum analyzers. The AD9430 is a 12-bit monolithic sampling ADC with an on-chip track-and-hold circuit and is optimized for speed, low power, small size and ease of use. The device has signal-to-noise ratio (SNR) performance of 64 dB as high as 65 MHz at 210 MSPS and spurious free dynamic (SFDR) range of 80 dBc as high as 65 MHz at 210 MSPS. Integral non-linearity (INL) is typically +/- 1.5 least significant bit (LSB), and differential non-linearity (DNL) is +/- 1 LSB. Power dissipation of the AD9430 is typically just 1.3 W at 210 MSPS. In the AD9430, there is the option to select an output data format of twos to complement or offset binary. In addition, the user can select between CMOS- or LVDS-compatible outputs. VCO for point-to-point radio systems
Z-Communications introduces the CLV0700E for point-to-point radios operating between 680 and 720 MHz. Generating frequencies within 0.5 to 4.5 VDC of control voltage, it tunes the 40 MHz bandwidth with an average sensitivity of 29 MHz/V. It exhibits a spectral signal of -110 dBc/Hz, typically, at 10 kHz from the carrier while operating from a 5 VDC supply and drawing 19 mA. It features 1.1:1 linearity over frequency and temperature can take the error voltage directly from the IC's charge pump circuitry. VCO for point-to-point radio systems
The GFI Group introduces the CT-1645-N circulator covering the 243-318 MHz transmit band. The device handles 500 W cw power with very low loss. Specifications for the circulator include 20 dB min. isolation, 0.3 dB max. loss and 1.25 VSWR. Type N connectors are standard. SIGNAL SOURCES
Surface-mount oscillator with low standby current
Raltron Electronics offers a new surface-mount crystal oscillator featuring a low standby current of 10uA max. This new series offers designers a component that leads to an extended life for battery-powered instrumentation, portable equipment and consumer products. With a frequency range of 1.00 to 133 MHz, the new series CO43S and CO46S are offered in frequency stabilities of ± 25, 50 and 100 PPM in a ceramic package of 5.0 × 7.0 × 1.8 mm. Operating current is at 3.3 V with current drains of 12, 25, 35 and 60 mA, depending on the frequency range of the oscillator. Standby current in all configurations is a low drain of 10 uA. Standard temperature range for the series CO43S and CO46S is -20°C to +70°C and an extended range of -40°C to 85°C is available. TCXO offers Stratum 3 stability for SDH/SONET
Fordahl's DFA S1-LHZ series of high-stability, miniature, temperature-compensated crystal oscillators (TCXOs) offer up to Stratum 3 stability for SDH/SONET telecommunications systems. The 9 × 14 × 6 mm SMD package implements a temperature compensation ASIC, and offers full Stratum 3 holdover mode compliance (± 0.37 ppm/24 hours) from 0 to 70°C as high as 13 MHz and from 0 to 50°C up to 20 MHz. It also features ± 4.6 ppm/15 years overall stability. Standard frequencies include 1.544, 2.048, 12.8, 19.44 MHz and 20.00 MHz, although others can be specified. The DFA S1-LHZ provides an LVHCMOS output and a tri-state option. Low-cost broadband VCO for CATV
Z-Communications announces the V586ME08 into its exclusive family of high performing modules. The V586ME08 covers a broad bandwidth of 850 MHz with a silent spectral signal exhibiting a phase-noise performance of -97 dBc/Hz. This new device has been developed to address the needs of high-performance, low-cost applications such as CATV headend equipment. Generating frequencies between 1400 and 2250 MHz, the V586ME08 covers the 850 MHz bandwidth within 0.5 to 14.5 V of control. The device delivers 9.5±3.5 dBm into a 50Ω load with a 11.5 V supply while drawing less than 22 mA. The V586ME08 exhibits a respectable phase noise response of -5 dBc, typical. In addition, this new product minimizes load pulling to less than 15 MHz with a 14 dB return loss, any phase, and it will also push less than 1 MHz/V. High-power broadband RF module
As part of Mitsubishi Electric's new radio frequency (RF) product strategy to deliver higher performance, lower design costs and reduced designer time-to-market, the company now offers the RA45H4452M, a UHF-band, 45 W, RF power module for mobile communications. The RA45H4452M, manufactured in 0.5 mm MOSFET process technology, meets wider bandwidth demand from the mobile radio market with its new wideband-matching technology. Incorporating a negative feedback circuit and a multistage matching circuit, this new wideband matching technology enables increased wideband performance of 440-520 megahertz (MHz) from the previous generation's range of 440-490 MHz. Synchronous clock generator for telecom apps
The Connor-Winfield low jitter LVPECL Synchronous Clock Generator Model SCG6500NT is a high-precision phase-lock-loop frequency translator that provides designers the reliable performance they need to optimize the performance of their telecom network equipment. The SCG6500NT provides a system designer with the following LVPECL differential outputs: one 622.08 MHz £ .8 ps jitter; one 155.52 MHz £ 1 ps jitter; and two 77.76 MHz £ 4 ps jitter, as well as an 8 kHz. Switching between reference input signals can be accomplished either manually or autonomously. And, autonomous switching can be either revertive or non-revertive. Modules in the SCG6500NT series are well suited for OC-48/OC-192 line cards, SERDES, and service termination cards to provide synchronization for TDM, PHD, SONET, and SDH network equipment. Voltage-controlled SAW oscillator
Micro Networks announces the M650 Series voltage-controlled SAW oscillator designed and developed specifically for clock smoothing and frequency translation applications in telecommunication. The M650 Series VCO uses a SAW resonator internally, which provides jitter performance over a 0 to 70° temperature range. Some typical applications are clock smoothing, frequency translation and clock and data retiming. TCXO for Semtech clock generator
C-MAC MicroTechnology offers a new miniature temperature-compensated crystal oscillator (TCXO) designed to provide the holdover frequency signal for Semtech's single-chip ACS8510 synchronous equipment timing source (SETS) device for use within SDH/SONET transmission equipment. By use of C-MAC's compact analog temperature compensation IC, known as Pluto, the new E2747 TCXO can provide the requisite Stratum 3 frequency stability with a device footprint of 7 × 5 mm. The E2747 runs from a 3.3 V supply with a typical current consumption of 2.5 mA, maximum 4 mA. This power consumption is considerably less than the classic solution using an oven-controlled crystal oscillator (OCXO), which typically draws 1 W. Due to the E2747's compact design, the temperature sensor and quartz crystal within it are closely coupled, enhancing the dynamic frequency stability. Specifications at a glance:
TEST & MEASUREMENT
Real-time, remote monitoring satcom spectrum analyzer
Morrow Technologies announces the launch of its real-time, remote monitoring P9116 satcom spectrum analyzer. The full-featured P9116 promises to reduce downtime and costly field service calls by allowing remote system monitoring from virtually any location via local area network (LAN), modem or the Internet. The user can locate the P9116 analyzer at a base station and remotely operate it from any PC. There is no need for third-party software or hardware. The P9116 is optimally configured to analyze frequencies ranging from 100 KHz to 1.6 GHz. A complete Pentium PC and Windows NT operating system is built into the P9116#39;s ruggedized industrial chassis. Add-on options include multi-user simultaneous access, data logging and multi-input switches.
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