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 Microwave Components Mar 1, 2005 12:00 PM MMIC doubler
Mimix Broadband Inc. has introduced a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) differentially fed doubler with RF buffer amplifier that can be used to drive fundamental mixer devices. Using 0.15-micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this doubler converts input signals in the 10 GHz to 20 GHz frequency range to output signals in the 20 GHz to 40 GHz frequency range and has +13 dBm output drive at +0 dBm input. The doubler, identified as 40DBL0458, is intended to drive Mimix's highly integrated receivers and is suitable for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services and satcom applications. Engineering samples are available from stock, along with production quantities. MMIC image reject mixers
Hittite Microwave Corporation has introduced six MMIC I/Q mixer die (HMC520, HMC521, HMC522, HMC523, HMC524, HMC525) and two SMT MMIC I/Q mixers (HMC520LC4 and HMC522LC4) that cover an RF/LO frequency range of 4 GHz to 32 GHz. These IC mixer products deliver up to 40 dB of image rejection. These I/Q mixers offer wide IF bandwidth of up to dc -3.5 GHz, conversion loss as low as 7.0 dB, input IP3 as high as +28 dBm and an RF to LO isolation of up to 50 dB. Each of these mixers is fabricated on a mature, reliable and production-qualified high-volume GaAs MESFET process. For applications where a surface-mount package is desired, the HMC520LC4 and the HMC522LC4 are offered in a “Pb-free” and RoHS-compliant, 4 mm × 4 mm leadless SMT package. All of these MMIC mixers will be available in the LC4 package in the second quarter of 2005. Products are available from stock for sampling or sale. Active mixers
Linear Technology has introduced two new RF active mixers, the LT5526 and LT5525. The LT5526 features an IIP3 (input third-order intercept) of 16.5 dBm at 900 MHz and a noise figure of 11dB. This performance is complemented by a conversion gain of 0.6 dB. The LT5526 requires only -5 dBm LO drive, and its port-to-port LO leakage is exceptionally low at -65 dBm, reducing external filtering requirements. The LT5526 has fully differential inputs and outputs and operates over a wide bandwidth ranging from 100 kHz to 2 GHz. The device has the capability for use as either a downconverting mixer or as an upconverting mixer in many applications. The LT5525 features an on-chip RF input transformer and offers internal 50-Ohm impedance matching at both the RF and the LO (local oscillator) inputs. These inputs can be driven single-ended, without external impedance-matching components, thus facilitating ease of use and reducing costs. The LT5525's IIP3 is 21 dBm IIP3 at 900 MHz, and 17.6 dBm at 1.9 GHz. At 900 MHz, the noise figure is 14 dB and the conversion gain is -2.6 dB. The LT5525 requires only -5 dBm LO drive and offers high port-to-port isolation. Both the LT5525 and LT5526 operate from a single supply voltage, ranging from 3.6 V to 5.3 V. Typical operating current is 28 mA. The devices can operate at a supply voltage as low as 3 V with reduced linearity performance. These devices are offered in a 16-pin 4 mm × 4 mm surface-mount QFN package. Film bulk acoustic resonator
Agilent Technologies Inc. has announced a higher-performance film bulk acoustic resonator (FBAR) full-band transmit filter for handsets, data cards and other wireless products operating in the United States. PCS (personal communications service) frequency band. The Agilent ACPF-7003 features higher rejection — 35 dB minimum, 45 dB, typical, in the 1930 MHz to 1990 MHz receive band — than Agilent's widely used ACPF-7002 full-band filter. It also offers lower maximum insertion loss over portions of the 1850 MHz to 1880 MHz transmit band and improved input and output match to 50 Ohms. The ACPF-7003 is built with Agilent's Microcap bonded-wafer chip scale packaging technology. This process allows the ultrasmall filter to be assembled in a molded-chip-on-board module that is less than 1.0 mm high with a 1.6 mm × 2.0 mm footprint. The filter is specified over the -30° C to +85° C operating temperature range. The Agilent ACPF-7003 is priced at $0.55 each in 100,000-piece quantities. Samples and production quantities are available through Agilent's direct sales channel and worldwide distribution partners. Wide bandwidth mixer
Mimix Broadband Inc. has introduced a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) image reject mixer that covers the 12 GHz to 34 GHz frequency bands. The image reject mixer, identified as 20IRRFM0374, has a conversion loss of 8 dB, a +15 dB image rejection across the band and an input-referred third-order intercept greater than +24 dBm over that band. It is intended for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services and satcom. Mimix performs 100% on-wafer RF testing on the 20IRRFM0374, as well as 100% visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. Engineering samples are available from stock, and production quantities are available six to eight weeks ARO. Bidirectional high-pass filter
Lorch has introduced a bidirectional high-pass filter, the 4HPD-2000/A18000-SR. The filter features a 1 dB typical cut off of 2000 MHz. The insertion loss is 1.0 dB maximum from 2000 MHz to 18 GHz. The VSWR is 2.0:1 from 2200 MHz to 18 GHz. The physical size is 0.750 × 0.750 × 0.500, excluding SMA female removable connectors. SiGe mixer for 2.5G/3G base stations
Maxim Integrated Products has introduced the MAX2039, a fully integrated SiGe passive mixer. Designed specifically for 2.5G/3G wireless infrastructure applications, this single IC provides 34.5 dBm of IIP3, 24.4 dBm of IP1dB, 7.3 dB of noise figure and a conversion loss of only 7.1 dB. The MAX2039 is intended for 1700 MHz to 2200 MHz W-CDMA/UMTS, DCS/PCS/EDGE, cdma2000 and TDMA base-station applications. The device offers a 40 MHz to 350 MHz IF frequency range with a 1400 MHz to 2000 MHz low-side LO injection range. A LO frequency range of 1900 MHz to 2400 MHz is also supported by the MAX2041, which has been optimized for high-side LO injection. The MAX2039 integrates a double-balanced mixer core with a LO amplifier, two baluns, a LO switch, plus dozens of discrete components. Frequency hopping is supported with the integrated SPDT LO switch with switching speeds of <50 ns and 45 dB of LO1-to-LO2 isolation. The onboard 0 dBm drive, LO buffer provides ±3dB drive-variance control, yielding stable gain, NF, and IIP3 performance over temperature, supply and input power. The device has excellent gain-variation performance of ±0.5 dB over the -40° C to +85° C industrial temperature range. IIP3 spread is similarly impressive at ±0.75 dB over temperature. The MAX2039 comes in a compact 5 mm × 5 mm, 20-pin thin QFN. Lead-free packaging is also available. Band-reject filter
Lorch has introduced a band-reject filter with bidirectional inputs, the 5BR7-2140/150-SR. The filter features a 3 dB typical bandwidth of 150MHz. The insertion loss is 1.2 dB maximum over the bands 1500 MHz to 2005 MHz and 2275 MHz to 3000 MHz. The VSWR is 1.5:1 over the passbands excluding the notch area. The notch depth is 30 dB from 2110 MHz to 2170 MHz. The physical size is 1.50 × 0.380 × 0.380, excluding SMA female removable connectors. Coaxial resonator oscillator
Sirenza Microdevices has announced the extension of its Coaxial Resonator Oscillator (CRO) product family now featuring 5 V CROs, in addition to the formerly released 8V CROs. The first two products from this family are the CRO190-1280T and the CRO190-2610T. These narrowband oscillators operate with center frequencies of 1280 MHz and 2610 MHz, respectively, providing 10 dB better phase noise vs. traditional voltage-controlled oscillators (VCOs). Sirenza intends to release additional CROs in the 800 MHz to 3GHz range in the near term and will offer custom CRO modules to domestic and international customers. Bipolar power transistors
The PH1090-700B from M/A-COM is an NPN common-base Class C pulse power transistor designed for IFF and other avionics applications in the frequency band of 1030 MHz to 1090 MHz. The saturated output power exceeds 700 Wpk at 32 µs pulse width and 2% duty cycle. Guaranteed gain is 7.5 dB at 50% collector efficiency, and under rigorous Modes-S pulse burst conditions, the device delivers over 450 Wpk saturated output power with 55% collector efficiency. The silicon bipolar line-up consisting of the MAPRST0002 and the PH1214-300M deliver a typical gain of 18 dB at 150 µs pulse width and 10% duty cycle. The saturated power output typically exceeds 360 Wpk and guaranteed collector efficiency for each device is 50%, with typical values in the high 50s to low 60s. The line-up was specifically designed to support ATC-pulsed radar applications in the 1200 MHz to 1400 MHz frequency band. Both devices are NPN, common base Class C microwave power transistors assembled in hermetic/metal packages for high reliability. The silicon bipolar line-up consisting of the MAPRST1214-06UF, MAPRST1214-30UF and MAPRST1214-150UF was designed specifically for ultralong pulse radar applications in the 1200 MHz to 1400 MHz bandwidth. They provide 150 Wpk. This lineup delivers a minimum 24 dB gain with minimum collector efficiencies of 45% for the 150 UF and 30 UF (typical >50%) and 40% for the 6 UF. Devices are rated for operation up to 6 ms pulse width and 25% duty cycle. 24 GHz to 34 GHz GaAs MMIC receiver
Mimix Broadband Inc. has introduced a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) subharmonic receiver, the 29REC0239, which includes a three-stage balanced LNA followed by an image reject subharmonic anti-parallel diode mixer and integrated LO buffer amplifier. The image reject mixer eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. Using 0.15-micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this receiver covers the 24 GHz to 34 GHz frequency bands and uses a +2 dBm LO drive level at half the internal LO frequency. The receiver, 29REC0239, has a noise figure of 3 dB and 15 dB image rejection across the band. It is suited for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution service and satcom.
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