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 Power Transistors Feb 1, 2008 12:00 PM 1700-2700 MHz, 5 W amplifier GaN power transistors
Gallium nitride (GaN) on silicon RF power transistor developer Nitronex has developed a 28 V, 5 W class high-electron mobility transistor (HEMT) for broadband applications from dc-6.0 GHz. Designed using Nitronex's patented SIGANTIC NRF1 process, the NPTB00004 achieves 250 mW average output power at 1% EVM in 3.5 GHz WiMAX systems (single-carrier OFDM, 64-QAM ¾, 8 burst, 20 ms frame, 15 ms frame data, 3.5 MHz channel bandwidth, peak/avg = 10.3 dB). It is designed as a pre-driver for higher-power products such as the NPT25100. Combined with other broadband devices, this device allows designers to develop power amplifiers for multiple frequency bands using a common power device lineup, according to Nitronex. The NPTB00004 is production ready and the qualification report is available online. It is packaged in a cost-effective plastic overmolded SOIC-8 package with an exposed thermal pad. Samples and application boards are available. Typical pricing is $9 each in quantities of 1000, with a lead time from stock to 10 weeks. The NPTB00004 transistors are lead-free and RoHS compliant. High-efficiency HBTs
TriQuint Semiconductor's new-generation high-voltage GaAs heterojunction bipolar transistors (HBTs) are designed to substantially increase the efficiency of power amplifiers for 3G cellular base stations. According to TriQuint, it has tested the first of its new HV-HBT amplifiers in a design commonly used by base station amplifier manufacturers that pairs devices in a ‘Doherty’ configuration. Used in this manner, the devices delivered an efficiency level of 57%, surpassing the efficiencies available using either conventional LDMOS transistors or more expensive GaN devices, stated TriQuint. Aimed at WCDMA applications, TGH2932-FL is the first new member of the TGH293x series of base station amplifier transistors. Doherty amplifier reference design
Nitronex has partnered with Prescient Wireless to develop a broadband Doherty power amplifier for WiMAX applications based on its NPT25100 GaN-on-Si power transistor. The design provides 20 W linear power from 2.5GHz to 2.7 GHz while achieving more than 30% efficiency, and 2% EVM with digital pre-distortion. According to the partners, typical performance numbers were taken using a mobile WiMAX waveform defined as single-carrier OFDMA 64-QAM ¾, 10 MHz channel bandwidth, 9.5 dB PAR @ 0.01% probability during the transmit portion of a 50% duty cycle TDD signal. The reference design consists of the schematic, bill of materials, circuit board layout files, detailed performance data, and other documents describing the design. Built and tested Doherty application boards are available for a suggested resale price of $1950. Reference design documentation and other information are available on the Nitronex web site. GaAs HEMT amplifiers
Targeting microwave and millimeter-wave radios, Hittite Microwave Corp. has released a new family of gallium arsenide (GaAs) high-electron mobility transistor (HEMT) wideband amplifier dies that offer up to +24 dBm of output power at 1 dB gain compression over the 16 to 86 GHz frequency band. The HMC-APH196 and HMC-APH596 are two-stage wideband gallium arsenide (GaAs) MMIC high-electron mobility transistor (HEMT) medium PA dies that operate between 16 and 33 GHz. The HMC-APH196 provides 20 dB of gain and +22 dBm of output power at 1 dB gain compression while requiring only 400 mA from a single +4.5 V supply. The HMC-APH596 provides 17 dB of gain and +24 dBm of output power at 1 dB gain compression while requiring only 400 mA from a single +5 V supply. The HMC-APH510 and HMC-APH403 are three-stage GaAs HEMT medium PA dies covering the 37 GHz to 45 GHz frequency band. The HMC-APH510 provides 20 dB of gain and an output IP3 of +35 dBm while requiring only 640 mA from a +5 V bias supply. The HMC-APH403 provides 21 dB of gain with a output IP3 of +32 dBm. This amplifier also provides +23 dBm of output power at 1 dB gain compression while requiring only 475 mA from a +5 V supply. Likewise, HMC-ABH209 and HMC-ABH241 are two-stage and four-stage GaAs HEMT MMIC medium PA dies that operate between 50 and 66 GHz. While HMC-ABH209 provides 13 dB of gain and an output IP3 of +25 dBm with only 80 mA from a +5 V bias supply, the HMC-ABH241 provides 24 dB of gain with a output IP3 of +25 dBm. This amplifier also provides +17 dBm of output power at 1 dB gain compression while requiring only 220 mA from a +5 V supply. Additionally, HMC-APH633 and HMC-AUH318 are two-stage and three-stage GaAs HEMT MMIC medium PA dies that operate between 71 GHz and 76 GHz. The HMC-APH633 provides 13 dB of gain and an output power of +20 dBm at 1 dB gain compression while requiring only 240 mA from a single +4 V supply. The HMC-AUH318 provides 24 dB of gain and +17.5 dBm of output power at 1 dB gain compression while requiring only 130 mA from a +4 V supply. And HMC-AUH317 and the HMC-AUH320 are three-stage and four-stage GaAs HEMT MMIC medium PA dies that operate between 71 GHz and 86 GHz. The HMC-AUH317 features 22 dB of gain and an output power of +17.5 dBm at 1 dB gain compression while requiring only 160 mA from a +4 V supply. The HMC-AUH320 features 15 dB of gain and an output power of +15 dBm at 1 dB gain compression while requiring only 130 mA from a +4 V supply. WiMAX LDMOS FETs
Targeting WiMAX power amplifier applications, Infineon has released three new RF LDMOS FETs for the 2.6 GHz to 2.7 GHz frequency band. The new 85 W and 170 W devices join the company's WiMAX FET family. The 85 W device is available in two packages. Thermally enhanced packages are lead-free and RoHS compliant. Ultralow on-resistance
NEC Electronics America, Inc. has introduced a new low-voltage power MOSFET with ultralow on-state resistance. The new NP180N04TUG power MOSFET features an advanced architecture and advanced package designed to manage heat dissipation and reduce power loss with one of the industry's lowest RDS(on), 1.5 mΩ (maximum). Operating at 40 V drain source voltage and 180 amperes (A), the device is aimed at automotive systems, low-voltage dc motor controllers and uninterruptible power supplies that require high current capability, stringent power management and high reliability. Manufactured using its UMOS-4 trench process technology, it achieves an ultrafine design rule of 0.25 microns and results in higher cell density, up to 160 million cells per square inch. Thus, achieving lower RDS(on) over a given area of silicon. The device also features advanced TO-263-7 package, which uses a unique multibonding technology that doubles the number of bonding wires from two to four. Additional bond wires lower on-resistance while improving the MOSFET's current-carrying capabilities up to 180 A. It is rated for both single and repetitive avalanche energy and for operation up to 175 °C at a gate voltage of 10 V and a drain voltage of 40 V. All NP series MOSFETs are qualified to meet the Automotive Electronics Council AEC-Q101 standard. The power MOSFET comes in a RoHS-compliant package. And the pricing starts at $2.50 each in low volumes. GaN power and noise
Sirenza Microdevices has produced gallium nitride (GaN) power amplifiers with an output power above 2 W and a noise figure (NF) below 1 db, encompassing the 0.2 GHz to 8 GHz range. According to Sirenza, its GaN-based high-electron mobility transistor (HEMT) amplifier was built at Northrop Grumman Corp.'s Space Technology sector in Redondo Beach, Calif. What is exceptional about this amplifier is that it exploits both the low noise and high-power capability of the GaN HEMT device technology, stated Sirenza. Potential applications for such an amplifier include cellular base station transceivers, WiMAX and CATV. At 12 V and 200 mA the MMIC PA recorded a NF of approximately 0.5 dB. At 15 V and 400 mA, the NF was in the range of 0.7 to 0.9 dB. Maximum power density of the device was reported as 2.2 W/mm. WiMAX Pas
Anadigics Inc. has expanded its portfolio of WiMAX power amplifiers (Pas) with the introduction of the AWM6423. The AWM6423 PA for mobile WiMAX supports the 802.16e-2005 standard, offering unparalleled power efficiency and high linearity in a highly integrated module package. The company already supplies key WiMAX equipment manufacturers with Pas such as the AWM6430, AWM6431 and AWM6432 for fixed-point 802.16d-2004 applications. The AWM6423 operates in the 2.5-2.7 GHz frequency band, allocated for broadband mobile wireless services in the United States. Additional products are already in development for other broadband mobile wireless systems that use various frequency bands around the world. Highly integrated 4.5 mm × 4.5 mm AWM6423 WiMAX PA module provides an integrated step attenuator and output power detector, minimizing external component count, PCB space requirements, and development costs for new designs, according to the maker. The PA operates with an exceptional power efficiency of 20% using a +3.3 V supply, supporting an error vector magnitude (EVM) of 4% at +23.5 dBm output power for 16-QAM signals. Excellent linearity and an EVM of 2.5% can be achieved to support 64-QAM signals by either reducing output power or increasing supply voltage. The PA module offers fully matched RF ports and can operate from a +2.9 to +4.2 V power supply. The WiMAX Pas are based on its patented InGaP-Plus process technology that supports enhanced feature integration and provides superior performance and reliability, according to Anadigics. The WiMAX Pas are fully compatible with the IEEE 802.16 and ETSI EN301-021 standards, and are manufactured using a materials set consistent with the European Union's RoHS directive. EDGE power amplifiers
RF Micro Devices is supporting the production of Huawei' U120E 3G multimode (UMTS/EDGE) handset with its RF3161 quad-band large-signal polar modulation (LSPM) EDGE power amplifier (PA) module. According to RFMD, RF3161 is the industry's smallest and thinnest EDGE PA in production and is designed to support all major merchant market 3G multimode handset platforms implementing LSPM EDGE transmit architectures. The highly integrated RF3161 is a high-power, high-efficiency power amplifier module with integrated power control that provides more than 50 dB of control range. The device is a self-contained 6 mm × 6 mm ×1 mm module with 50 Ω input and output terminals. The device is designed for use as the final RF amplifier in GSM850, EGSM900, DCS and PCS handheld digital cellular equipment and other applications in the 824 MHz to 849 MHz, 880 MHz to 915 MHz, 1710 MHz to 1785 MHz and 1850 MHz to 1910 MHz bands. The RF3161 can be used for GSM and Polar Mod EDGE applications. The RF3161 requires no external routing or external components, simplifying layout and reducing board space.
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