Microchip Technology Inc. introduced the rfPIC development Kit 1, which allows design engineers to evaluate low-power radio frequency (RF) communication links for embedded control applications. Designed to work in tandem with the company's PICkit 1 flash starter kit, the rfPIC Development Kit 1 consists of transmitter and receiver modules supporting the 315 MHz and 433 MHz frequencies. Code development is performed with Microchip's MPLAB integrated development environment, and programming the microcontroller is accomplished by plugging the modules into the PICkit 1 flash starter kit.

The kit is available today with 315 MHz and 433 MHz amplitude shift keying. Pricing is $25 for the rfPIC receiver module, $30 for the rfPIC transmitter module, and $135 for a kit that includes two receivers, two transmitters and the PICkit 1 flash starter kit.
Microchip Technology Inc.
www.microchip.com

Chartered Semiconductor Manufacturing Ltd., announced that the Center for Integrated Circuit & Systems at Singapore's Nanyang Technological University (NTU) has successfully designed and manufactured a 10-GHz VCO utilizing Chartered's 0.18-micron RF CMOS semiconductor process. The company says this research achievement is an industry breakthrough for RFIC design as most 10-GHz VCO circuits commercially available today are manufactured using more costly silicon germanium processes. The power consumption of the core VCO is only 5.8 mW, 22.6 mW with buffer. The circuit demonstrates low phase noise of -91 dBc/Hz at 100 kHz offset frequency. Chartered's 0.18-micron RF CMOS process is currently available for volume production.
Chartered Semiconductor Manufacturing Ltd.
www.charteredsemi.com

WJ Communications Inc. added two new dual-branch devices to its line of surface mount downconverter modules. The CV211-2 and CV211-3 are ideal for high dynamic range receiver front ends using diversity receive channels for mobile infrastructure base station applications, the company says. The new converters target the UMTS and W-CDMA/IMT2000 bands. Each converter includes high-linearity, RF, frequency conversion, IF amplification and LO driver amplification in a 6 mm × 6 mm, 28-pin QFN package. Customized filtering can be enabled externally. Unit prices for the CV211-2 and CV211-3 models are $9.80 each purchased in 10,000 piece quantities. Fully assembled evaluation boards and loose samples are available now and can be requested directly from the WJ Web site.
WJ Communications Inc.
www.wj.com

M/A-Com, a unit of Tyco Electronics Group, announced a new SP6T switch for dualband, triband, and quadband GSM/GPRS/EDGE handsets, and what the company is calling the industry's smallest quad-band transmit module for wireless GSM/GPRS applications. The new MASWSS0091 switch component is a 2.5-volt, single-pole, six-throw high-power GaAs switch. It is fabricated on a 0.5 micron gate length GaAs pHEMT process. The MASWSS0091 transmit module combines pHEMT antenna port switches, two dual band InGaP HBT transmit (Tx) power amplifiers, a CMOS controller, and integrated passive networks for matching and filtering. It occupies 0.03 cm³ volume.
M/A-Com
www.macom.com

Advanced Power Technology Inc. announced the addition of two products to complement its family of high power, high voltage RF power MOSFETs. The ARF465A/B and ARF1505 are designed for high power, industrial RF generator/amplifier applications below 50 MHz, where the power supply is 300 V or less. They feature power dissipation of 250 W and 1500 W, respectively, and are designed to withstand operating voltages up to 300 V where their 1200 V breakdown rating gives the 4x safety factor required for class E or C-E operation. The ARF1505 makes it possible to produce 750 W of 27 MHz RF power with a single device in a 1 inch × 1 inch footprint.

The ARF1505 is available in APT's new flangeless package. To obtain the high power dissipation, the backside of the package is lapped to provide an optimum thermal interface surface to mate with the system heat sink. Applications for these devices include RF plasma generators at 13 MHz, 27 MHz, and 40 MHz, as well as broadband amplifiers 1.5 MHz to 30 MHz. Samples and volume production quantities are available starting 4 weeks ARO. The ARF1505 is priced at $178, and the ARF465A/B is priced at $61, both in 100 piece quantities.
Advanced Power Technology Inc.
www.advancedpower.com

Toshiba America Electronic Components Inc. announced what it calls the industry's first 90-watt C-band gallium arsenide field effect transistor (GaAs FET), in addition to expanding its 60-watt offerings.

The 90-watt TIM5964-90SL features output power of 49.5 dBm typical at a frequency range of 5.9 GHz to 6.4 GHz. The device is targeted for use in solid-state power amplifiers for base-station or earth-station satellite communications and radar applications, as well as for microwave digital radios for terrestrial communications.

The TIM4450-60SL expands Toshiba America's 60-W line-up, which currently includes parts in the 5.9 GHz to 6.4 GHz and 7.7 GHz to 8.5 GHz frequency ranges. This new device features an output power of 48.0 dBm typical, and was developed for use in solid state power amplifiers (SSPAs) for satellite communication and radar applications primarily supported by traveling wave tube amplifiers (TWTAs).

Samples of the TIM5964-90SL will be available in the third quarter of 2003, with prices beginning at $1,500 each. Engineering samples of the TIM4450-60SL are available now, with prices beginning at $1,000 each.
Toshiba America Electronic Components Inc.
www.toshiba.com/taec/

Analog Devices Inc. announced the newest member of its Othello family of direct-conversion radios. The OthelloOne TV (AD6539) includes all the features of previous Othello transceivers with on-chip VCOs, which were previously external. In addition, OthelloOne TV includes four separate LNA (low-noise amplifier) inputs, one for each GSM/GPRS frequency band.

Two versions of OthelloOne TV are available. The AD6539L is intended for use with the Analog Devices' X-PA family of power amplifiers with integrated power detectors/controllers. The second version, the AD6539, includes a power control loop and supports third-party power amplifiers without integrated power control. Both versions include four LNA inputs, integrated power-management, integrated LO and transmit VCOs, fractional-N PLL synthesizer, and the full direct-conversion receiver signal path.

The AD6539 and AD6539L are both sampling now, with production scheduled for mid-2003. Pricing for the products is less than $5.00 each, in 10,000 unit quantities.
Analog Devices Inc.
www.analog.com

Texas Instruments Inc. (TI) unveiled its newest highly integrated digital signal processor (DSP)-based DAB baseband. The TMS320DRE310 is designed to help manufacturers design and differentiate Eureka 147 digital audio broadcast (DAB) receivers. The programmable single-chip solution enables advanced DAB features for a variety of applications, including automotive, portable and handheld radios. Highly optimized for the automotive market, the new baseband increases the number of audio and data bit rates supported and integrates MP3 and Windows Media Audio.

The device utilizes software from RadioScape Ltd., and is the first DAB baseband to include on-chip support for features such as record and playback from flash memory or a multimedia card (MMC), time-shift recording and the capability for simultaneously listening to and recording different channels, the company says.

The TMS320DRE310 will sample in the fourth quarter of 2003, and will be available in either a 179-lead MicroStar ball-grid array (BGA) or a 144-lead thin quad flatpack (TQFP). Pricing is $18 each in sampling quantities of 1,000 or less.
Texas Instruments Inc.
www.ti.com

ON Semiconductor added the SOD-123FL package to its portfolio of discrete components. The SOD-123FL packaged devices are drop-in replacements for the SOD-123 (JEDEC DO219) footprint. The new package is ideal for TVS components and Schottky diodes necessary in portable and wireless board designs that must meet strict power management and protection requirements. The SOD123FL profile (1 mm maximum) is more than 25 percent lower than a standard SOD123 package, the company says. The device has an environmentally friendly, lead-free package platform with a 100 percent tin (Sn) finish on all externally plated surfaces. It is 260 degree C reflow capable to moisture sensitivity Level (MSL) 1 and is backward compatible with existing reflow processes.
ON Semiconductor
www.onsemi.com

California Eastern Laboratories announced the availability of a new, out-of-band tuner IC from NEC. Designed for down-conversion of out-of-band signals in digital and HDTV set-top boxes, the new UPC3220GR combines down-converter, AGC, and IF amplifier in a miniature 16 pin, surface mount, SSOP package. High linearity in the UPC3220GR reduces distortion with full channel loading in the forward path, while high gain and low noise helps increase system sensitivity, the company says. The device also features high dynamic range which helps to provide constant voltage at the input of the baseband processor.

CEL has evaluation boards available for the device, plus a variety of NEC AGC amplifier ICs. The UPC3220GR is available now and priced at $1.57 in 10,000 piece quantities.
California Eastern Laboratories
www.cel.com

Sirenza Microdevices Inc. announced the release of the SPF-3143, a 0.5 um low-noise pseudomorphic high electron mobility transistor (pHEMT) GaAs FET device suitable for highly-linear wireless low noise amplifier applications. At 2 GHz, the SPF-3143 discrete transistor achieves a Gmax of 20 dB and a minimum noise figure of 0.6 dB. In a typical 1.9 GHz application circuit, the SPF-3143 device delivers less than 1 dB NF, 15 dB gain, and +31 dBm of OIP3 with a supply voltage of 5 VDC and a typical current of 40 mA. The SPF-3143 is offered in a low cost, plastic SOT-343 package. Samples and application design support are available now.
Sirenza Microdevices Inc.
www.sirenza.com