TriQuint Semiconductor, a supplier of microwave and millimeter wave products for the defense industry, has been awarded a multiyear contract from the Defense Advanced Research Projects Agency (DARPA) to develop high-power wideband amplifiers in gallium nitride (GaN) technology.

GaN-based high electron mobility transistor (HEMT) devices provide the higher power density and efficiency required for high-power phased array radar, electronic warfare, missile seeker and communications systems. The Army Research Laboratory in Adelphi, Maryland is the contracting activity (W911QX-05-C-0087).

This contract runs in two phases. The first phase, lasting three years and valued at $15.8 million, covers the development of GaN material and devices to improve performance and reliability. The second, optional phase covers years four and five and is valued at $15.9 million. This phase will develop GaN high-power, wideband amplifiers and package technology for insertion into Department of Defense (DoD) systems.

TriQuint is the prime contractor and is teamed with BAE Systems, Emcore Corp., II-VI Inc., Lockheed Martin and Nitronex on the program. University researchers Michael Shur of Rensselaer Polytechnic Institute and Jesus del Alamo of the Massachusetts Institute of Technology are also participating. The program tasks include material optimization, device development, MMIC development and module demonstration. The contract emphasizes reliability, yield, uniformity and reproducibility. The program also includes a MMIC validation process. At the end of the five-year program, TriQuint Semiconductor will have a reliable, reproducible and stable GaN process suitable for DoD and commercial applications.

“TriQuint is very excited to be leading a highly qualified team in the development of this new technology. Gallium nitride offers a five-fold improvement in power density compared to gallium arsenide devices, and makes it ideal for high-power radar and communications applications,” said Anthony Balistreri, TriQuint's program manager for research and development. “TriQuint looks forward to providing high volume, cost-effective foundry services and standard products based on gallium nitride.”

“We have assembled an excellent team, with strengths in the key areas called out in the program requirements,” said Paul Saunier, TriQuint's principal investigator. “The team will combine talent and experience to minimize risk and reduce development time, leading to a successful development effort.”

TriQuint has worked with GaN since 1999 under the sponsorship of Lockheed Martin, as well as its own funding. Other team members have also been active in GaN technology development and have demonstrated promising results in terms of performance and reliability.

For more information, visit www.triquint.com.