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Predicting junction temperature and MTTF for MMIC devices Aug 1, 2005 12:00 PM By Radha P.N. Setty
The power rating of monolithic microwave integrated circuits (MMIC) is continuously going up. And the life of an MMIC component due to thermal related failure is directly related to the hot spot temperature on the die. Hence, circuit designers need to carefully design the interface between the MMIC component and the ambient to minimize the thermal related failure or increase the mean-time to failure (MTTF) of MMIC devices. In this article, we provide a simple method for thermal design of a printed circuit board (PCB). More accurate calculation requires performing thermal analysis using any of the finite element software such as ANSYS and COSMOS. Thermal resistance is defined as the ratio of temperature rise to the power dissipated and is expressed in °C/W. Manufacturers of MMIC components provide the thermal resistance from junction to case (▸ A packaged MMIC component consists of a semiconductor die (or chip) mounted on a lead frame. The die is attached to the lead frame using conductive epoxy or solder. Electrical connections from the die to lead frame are done using wire bonding. To protect the die from the harsh environment, it is covered with a plastic molding compound. The thermal resistance of the hot spot on the die to ambient consists of a series of thermal resistances:
Out of the six factors, the sum of the first three is popularly called ▸ This design tip explains the method of computing thermal resistance of the PCB (θ Thermal resistance is defined as (Eq. 1):
where: l= length (m), A= Area in m k= Thermal conductivity (W/m-K). For an unfilled via (Eq. 2):
where: d d Substituting Equation 2 into Equation 1, the thermal resistance of a single copper via can be calculated as (Eq. 3):
From the above equation it is seen that, thermal resistance will decrease as the
For ERA-5XSM, the data sheet provides a suggested PCB layout as reproduced in Figure 2. It consists of 12 via holes of 0.02-inch diameter (d Figure 3 shows thermal simulation using ANSYS power dissipation of 1 W. Hence the temperature rise indicated in Figure 3 is also the thermal resistance, which reads as 2.35 °C/W, which is close to 2.6 °C/W calculated. Hence manual calculation of the thermal resistance as shown can be used as a first-order approximation. Power dissipation in an ERA-5XSM amplifier is 0.3185 W (device voltage multiplied by operating current). There is an additional thermal resistance from PCB to ambient. The measured temperature rise of ERA-5XSM on the test board is around 11 °C. So one can calculate the thermal resistance from PCB to ambient as: θ = 34.5 °C/W Hence the total thermal resistance is: θ Hence T = Max ambient temperature +θ Assuming a max ambient temperature of 85 θC, for ERA-5XSM, the example under consideration, T Figure 4 shows the MTTF vs. junction temperature for ERA-5XSM. At the calculated junction temperature, the MTTF is around 200 years. For the PDF version of this article, click here. References
ABOUT THE AUTHOR
Radha P.N. Setty is director of engineering at Mini-Circuits, Brooklyn, N.Y.
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