Using its gallium nitride (GaN) RF transistors, Cree, Inc. has introduced commercially available GaN monolithic microwave integrated circuit (MMIC) amplifiers. According to Cree, these two catalog MMICs enable a dramatic reduction in size and increase in performance over hybrid amplifiers. Many RF integrated circuits (ICs) can now be identically replicated on a single silicon carbide (SiC) substrate in a production process similar to that used for commercial microprocessors, noted the manufacturer. The new broadband power amplifier MMICs, the CMPA0060005 and CMPA2560025, are now sampling in packaged and die formats, added Cree.

While CMPA0060005 is a wideband 5 W distributed amplifier operating from DC to 6 GHz, CMPA2560025 is a higher-power, 25 W reactively matched amplifier operating from 2.5 to 6 GHz. Both MMICs are suitable for a variety of applications where high power over broad bandwidth is required. As an example, a pair of CMPA2560025s driven by a CMPA0060005 can provide over 40 dB gain with an output power up to 50 W in the 2.5 to 6-GHz band, stated the supplier.

Cree also announces the expansion of its standard full-wafer (SFW) MMIC foundry service to include shared multi-project (SMP) "pizza mask" foundry runs on a quarterly basis. This SMP service is available for both SiC MESFET and GaN HEMT MMIC processes.

"The introduction of the industry's first off-the-shelf 'catalog' GaN MMICs continues to set Cree apart as the industry's leader in wide bandgap MMIC technology," said Jim Milligan, Cree’s director of RF and microwave products. "These products can provide our customers with the performance improvement and size-reduction benefits of microwave circuit integration in convenient 'drop-in' 50 Ohm amplifiers."

Other key features for CMPA0060005 GaN MMIC include high wideband DC to RF efficiency of 25% (typical) and 28 to 48 V operating voltage range. Likewise, CMPA2560025 offers up to 25 W CW RF output power with broadband efficiency of 30-45% (typical) and 28 V operating voltage.

According to Cree, both these new GaN MMIC products will be demonstrated next week’s IEEE/MTT-S International Microwave Symposium in Atlanta, GA.

www.cree.com