To support its ongoing gallium nitride (GaN) development efforts and the roll-out of new commercial and military products, RF semiconductor supplier and foundry services provider TriQuint Semiconductor has placed a large commercial GaN wafer order to IQE plc, manufacturer of advanced semiconductor wafers. According to TriQuint, it is the largest commercial GaN wafer order in the history of IQE Plc. However, further details were not provided. This announcement was made at this week’s GOMACTech 08 conference in Las Vegas, NV.

Another proponent of GaN at GOMACTech was Nitronex. Known for producing GaN-on-Silicon RF power devices for the broadband and commercial wireless infrastructure applications, Nitronex disclosed a GaN high electron mobility transistor (HEMT) that delivers 45 W at 28 V for high peak-to-average ratio (PAR) and pulsed applications. Designed using its patented SIGANTIC NRF1 process, the NPT1004 combines a broadband DC to 4GHz high power density GaN-on-Si HEMT with a cost-effective thermally-enhanced plastic package to offer an optimized solution for light thermal load power applications, according to the developer.

Since being awarded a multi-year GaN research development contract in excess of $30 million by the Defense Advanced Research Projects Agency (DARPA) in 2005, TriQuint has made significant improvements in GaN-based amplifiers. In fact, the company’s researchers presented a paper highlighting these findings at this year’s GOMACTech. conference. The paper titled “GaN HEMT and Wideband Power Module Development” disclosed a 100 W 2-20 GHz module. And discussed improvements in material capabilities, device structures, process techniques, design and fabrication of MMICs. These advances were made by TriQuint and partner organizations working on Phase II of the DARPA contract.

“IQE’s established track record in providing TriQuint with reliable, high-quality products was a key factor in selecting them to produce and deliver a range of advanced GaN epitaxial materials,” remarked TriQuint Research and Development Manager, Anthony Balistreri. “We’ve developed a close working relationship with IQE throughout the development phase of our GaN program.”

TriQuint’s recent order for GaN epitaxial HEMT wafers from IQE’s New Jersey facility will be used in ongoing military and commercial R & D efforts while supporting TriQuint’s new product roll-outs in 2008. According to IQE, GaN HEMT epitaxial are grown on a mixture of 3-inch and 4-inch semi-insulating silicon carbide (SiC). Balistreri said that because GaN’s performance is clearly superior to existing technologies at higher frequencies, TriQuint’s initial product and process releases will target the 2-20 GHz range. These frequencies cover the majority of commercial and military applications that are most viable in today’s markets, according to the company’s research assessments.

www.triquint.com
www.nitronex.com
www.gomactech.net

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