Infineon Technologies has released two new LDMOS RF power transistors targeting wireless infrastructure applications, such as WiMAX, in the 2.5 GHz-to-2.7 GHz frequency band. These products, which provide peak output power of up to 170 W, extend Infineon’s broad portfolio of RF power transistors for WiMAX applications, which currently includes 10 W, 45 W and 130 W devices.

Infineon’s PTFA260851E/F 85 W FET features 14 dB gain (typical) and 22% efficiency (typical) at 16 W average output power, under WiMAX signal conditions. The PTFA261702E 170 W FET features 15 dB gain (typical) and 20% efficiency at 32 W average output power, under WiMAX signal conditions. EVM is rated at – 29 dB.

Based on 8th generation LDMOS process, the PTFA261702E is rated at 170 W (P1 dB), the industry’s highest peak output power in the 2.5 GHz-to-2.7 GHz band, according to Infineon. The transistor’s architecture provides electrically isolated halves that ease use in Doherty power amplifier applications, said Daniel Rodriguez, Infineon’s marketing manager for RF power products. The device can also be used in a push-pull configuration for extended bandwidth performance, added Rodriguez.

Both products are available in lead-free, RoHS-compliant thermally enhanced ceramic packages. Operating at 28 V, these transistors provide broadband internal matching, and are capable of handling a 10:1 VSWR at CW power output and 28 V supply voltage.

Both, PTFA260851E/F and PTFA261702E are in production. Typically, in 1000 pieces, the PTFA260851E/F is priced at $70.00 USD and PTFA261701E at $150.00 USD.

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