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A 55 nm cell-based IC is introduced Jan 24, 2007 11:11 AM
NEC Electroncis has introduced the CB-55L, a cell-based integrated circuit that uses the company's 55 nm UX7LS process technology. The latest addition to NEC Electronics' ASIC lineup has achieved a 40% reduction in power consumption from the previous 90 nm CB-90M. CB-55L also offers more than double the density of previous devices, and offers very high reliability by resolving parameter variations often encountered at advanced process technology nodes. This combination of features makes the CB-55L well suited for portable battery-operated devices such as digital still cameras and digital video cameras, which have stringent power consumption requirements The CB-55L is based upon NEC Electronics' advanced UX7LS CMOS process technology, which is said to be the first 55 nm process in the world to use a high-k dielectric. It reduces leakage current and improves power consumption by 40% over previous 90 nm devices. The use of leading-edge 55 nm process technology makes it possible to increase density by 230%, fitting 925,000 gates per square millimeter. The maximum. available gates are 100 million and the maximum I/O is 2800. Power consumption is approximately 1.7 nW/MHz/gate. Packaging options include FPBGA, PBGA and FCBGA. The company will provide comprehensive IP macros such as USB2.0, JPEG, DDR/DDR2 required for digital cameras, camcorders, and other battery-operated applications, as well as commodity IP including PLLs, A/D converters, and D/A converters. NEC Electronics is now accepting orders. Libraries will become available in March.
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