Micron Technology has announced sample availability for what is said to be the industry's fastest main-memory, 1 Gb DDR2 components, capable of running at 1066 Mb/s.

DDR2 SDRAM double-data-rate two synchronous dynamic random access memory) is a random access memory technology used for high-speed storage of working data in computers and other digital electronic devices.

The DDR2 is one of the SDRAM family of technologies, which is one of many DRAM (dynamic random access memory) implementations, and is an improvement over its predecessor, the DDR SDRAM. The primary benefit of the DDR2 is its ability to run its bus at twice the speed of the memory cells it contains, thereby enabling higher peak throughputs than earlier technologies. This is achieved at the cost of higher latency.

Micron's DDR2-1066 memory offers a 33% speed improvement over the DDR2-800, currently the industry's fastest DDR2 speed available.

The DDR2-1066 components are produced with Micron's 78 nm 6F² process and operate at the JEDEC standard 1.8 V. The 1 Gb component density enables modules in densities ranging from 512 Mb to 2 Gb. Micron has already generated industry support for its DDR2-1066 components from chipset companies such as Advanced Micro Devices, VIA Technologies and Silicon Integrated Systems.

Samples of Micron's 1 Gb DDR2-1066 components are available for select customers; volume production is expected to begin in the third quarter.

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