Power Analog Microelectronics (PAM), a developer of Class-D digital audio amplifiers and high-power LED display driver semiconductors and Taiwan Semiconductor Manufacturing Company Ltd. (TSMC) have announced a joint development effort for bipolar-CMOS-DMOS (BCD) technology based on a 0.25 micron high-voltage process. The program will aim specifically at high-performance power analog ICs used in audio and video displays and devices.

As their part in the joint effort, PAM is contributing its know-how in high-voltage and high-current IC designs with specialty devices requirements. Whereas TSMC will transform this specialty technology into a mass-production proven process, thereby enabling TSMC to further expand in BCD platform technology.

"PAM is pleased to establish the partnership with the global foundry leader TSMC to jointly develop advanced BCD technology. This will enable us to deliver the most advanced next-generation products to satisfy customers' increasing demand for high-power devices for applications in flat-panel displays, as well as consumer audio and video markets," stated Johnston Chen, president and chief executive officer of PAM.

"Support for advanced BCD technology is an important part of our analog semiconductor manufacturing business," said Jason Chen, vice president of corporate development at TSMC. "Working with PAM enables us to partner with an innovator in power analog ICs with high-voltage design expertise."

Established in 2004, PAM focuses on high-voltage analog and power integrated circuits for use in flat-panel displays, consumer audio and video applications. PAM has set up an R&D manufacturing facility in Shanghai, China; a Technical Support Center in Shenzhen, China; and a supporting team in Taipei, Taiwan.

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