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High-speed device for dc-dc converter circuits boosts efficiency Feb 7, 2006 6:21 PM
Vishay Intertechnology Inc. has introduced two high-speed converter solutions that integrate a control MOSFET, a synchronous MOSFET and driver circuit in a single low-profile, high-performance PowerPAK MLF 10 x 10 package. The new products will simplify the design process for single and multiphase dc-to-dc circuits and provide 3% higher efficiency compared with discrete solutions. Intended for applications in servers, routers, point-of-load converters and 3.3 V, 5 V and 12 V intermediate bus architecture environments; the new devices conserve board space and power, thereby enabling higher power ratings in a compact footprint. The integration of the MOSFETs and driver minimizes the parasitic leakage inductance that might otherwise cause ringing and spikes at the switching node. The SiC714CD10 and SiC711CD10 can be used along with any PWM IC or ASIC to produce a highly efficient buck converter. A low-side MOSFET control pin enables pre-biased startup that prevents an undesirable sinking current from a pre-charged output capacitor to cause problems, particularly in POL and server applications. The new SiC714CD10, rated for input voltages from 3.3 V to 16 V, delivers up to 27 amperes of continuous output current in still air and is optimized for a 10% duty. Typical on-resistance values are 3 milliOhms for the low-side and 10.2 milliOhms for the high-side MOSFET. Vishay's SiC711CD10 is rated for input voltages from 3.3 V to 16 V and a 40% duty ratio and provides continuous output current up to 25 amperes. Typical on-resistance values are 4 milliOhms for both the high-side and low-side MOSFETs. Both devices are optimized for 12 V to logic-level conversion and are rated for a switching frequency between 100 kHz and more than 1 MHz. Their PowerPAK MLF 10 x 10 package provides low thermal impedance, and its simple pad geometries enable straightforward board layout and assembly. Break-before-make operation provides "shoot-through" immunity and minimizes dead time. These devices also feature undervoltage lockout and a turn-on/turn-off capability. An internal bootstrap diode further reduces the number of external components required. Samples and small quantities of the MOSFETs with integrated drivers are available; for larger orders lead time is 12 weeks.
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