The Raytheon Company is developing transmit-receive modules based on the advanced semiconductor gallium nitride (GaN) for use in future radar upgrades.

"This transmit-receive module demonstration and parallel reliability testing confirm that GaN will soon be ready to take over where increased power and advanced capabilities are needed," said Mark Russell, vice president of engineering at Raytheon's Integrated Defense Systems (IDS). The development is part of an on-going 42-month, $11.5 million Next Generation Transmit-Receive Integrated Microwave Module contract funded by the Missile Defense Agency's Advanced Technology Directorate.

Transmit-receive modules using GaN-powered monolithic microwave integrated circuit amplifiers have a significant performance advantage in that they provide significantly higher radio frequency power with greater efficiency than current modules. The program leverages GaN technology being developed under the Defense Advanced Research Projects Agency's Wide Bandgap Semiconductor program as well as company-funded efforts.

Russell said that GaN technology significantly extends the radar's reach by increasing radar ranges, sensitivity and search capabilities. Alternatively, the technology enables reduction in the size of the antenna, which improves transportability and reduces acquisition and lifecycle costs without sacrificing performance.

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