Toshiba America Electronic Components has introduced a family of small-signal MOSFETs (S-MOS) that are suitable for high-speed switching applications, including dc-dc converters in portable electronics equipment. The MOSFETs exhibit very low ON-resistance and capacitance and are housed in 2.8 mm x 2.8 mm and 1.6 mm x 1.6 mm packages. These devices have been designed to save space while meeting designers' requirements for low internal power loss and low operating voltage in medium output current range applications.

This S-MOS family includes 17 six-pin devices (SSM6K- and SSM6J-) designed for 0.5 to 2.5 ampere load switching applications and dc-dc converters operating at 0.5 MHz to 1MHz. Also included are 20 three-pin devices (SSM3K- and SSM3J-) that are suitable for 0.5 A to 4.0 ampere switching devices. These are six-pin devices, with ON resistances of 30 milli-ohms to 400 milli-ohms, and are housed in an ultrasmall 1.6 mm x 1.6 mm x 0.55 mm package (ES6). The three-pin devices feature ON-resistances from 100 milli-ohms to 400 milli-ohms and are offered in a 2.8 mm x 2.9 mm x 0.7 mm package (TSM). N- and P-channel versions are available in both package types.

To support a wide range of design requirements, the six-pin S-MOS family includes N-channel devices with drain source voltage of 20 V or 30 V and P-channel devices with a -12 V, -20 V or -30 V drain source voltage. The three-pin S-MOS family includes N-channel devices with drain source voltage of 20 V, 30 V or 60 V and P-channel devices with a -12 V, -20 V or -30 V drain source voltage.

Samples of these devices are scheduled to become available next month. Prices range from $0.05 to $0.14 each, in sample quantities.

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