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 8.7 GHz to 10.7 GHz GaAs MMIC delivers 10 watts Apr 26, 2005 4:21 PM
Mimix Broadband Inc. has introduced a new gallium-arsenide (GaAs) monolithic microwave integrated circuit (MMIC) amplifier. This is a two-stage, single-ended X-band device, which includes an on-chip gate bias circuit to simplify biasing. This high-power amplifier, designated as the XP1007, is well suited for radar and communications systems, primarily in military applications. "Mimix is offering this amplifier in partnership with The Netherlands Organization for Applied Scientific Research (TNO), one of the largest research and technology organizations of Europe," said Rick Montgomery, CEO of Mimix Broadband Inc. "As strategic partners, we have collaborated to introduce this 10 W, high-power amplifier to the marketplace, offering an industry-leading device for X-band applications," he added. This device covers the 8.7 GHz to 10.7 GHz band, delivers 40 dBm output power, and offers 32% power-added efficiency. The amplifier also has a typical large signal gain of 17 dB along with good 50 Ohm input and output matches. Mimix performs 100% on-wafer RF and dc testing on the XP1007, as well as 100% visual inspection to MIL-STD-883, method 2010. The chip is surface passivated to protect it and provide a rugged part with backside via holes and gold metalization to facilitate conductive epoxy or eutectic-solder, die-attach. Engineering samples and production quantities are available six to eight weeks after receipt of the order.
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