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Modelithics to distribute models for Cree Microwave's high-power LDMOS transistors Jan 27, 2005 3:34 PM
Under a 2005 agreement, Tampa, Fla.-based Modelithics, Inc. will distribute a library of high-accuracy, non-linear models for a family of LDMOS power transistors manufactured by Cree Microwave of Sunnyvale, Calif., a wholly owned subsidiary of Cree, Inc. Dubbed Curtice-Modelithics-Cree (CMC), the models are based on a new LDMOS non-linear methodology developed in collaboration among W.R. Curtice Consulting, Cree Microwave and Modelithics. As part of the new agreement, Modelithics will continue to distribute and support the Cree high-power LDMOS model library, which is now available for multiple electronic design automation (EDA) tools, at no cost to qualified RF/microwave designers. John Quinn, vice president of Cree Microwave, stated, "Partnering with Modelithics enables Cree Microwave to provide highly accurate models for a large number of the devices in our LDMOS RF Power Transistor product range. Our customers can now design and evaluate circuit and system-level performance with a level of accuracy not previously available, substantially shortening design time and reducing risks in the entire design process. The CMC models have also significantly improved accuracy in predicting device performance over a wide range of conditions, including Class A/B for high linearity applications as well as deeper back-off (Class B and E) for more novel circuit approaches." According to Larry Dunleavy, president of Modelithics, "It is important to Cree that their customers receive the highest level of support and ease of installation of these high-quality, well-documented models. Modelithics is committed to making better models available to the RF and microwave design community through cooperative alliances with device suppliers such as Cree Microwave, and with EDA providers including Agilent Technologies, Ansoft, Applied Wave Research and Eagleware." The Cree Microwave LDMOS models operate over wide bandwidths and power levels, allowing accurate simulations of key amplifier performance characteristics,including: S-parameters, power gain, efficiency, intermodulation, and harmonics.
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