As per Cree, Inc.’s press release, UK’s EMC amplifier supplier MILMEGA is using its silicon carbide (SiC) based MESFETs to provide the RF power in MILMEGA’s new line of UHF power amplifiers. MILMEGA’s new power amplifiers are designed for the electromagnetic-compatibility (EMC) and test-instrumentation markets, and the inherent benefits of SiC MESFETs have been exploited to create a robust UHF power amplifier family providing high reliability, exceptional power density, ease of power upgrade and portability, said Cree.

“We selected Cree SiC MESFET devices based on their power density and efficiency advantages. They enable amplifier products that are up to three times smaller and lighter than those using conventional transistor technology. This provides MILMEGA with a unique advantage in terms of performance and cost versus existing competitive products,” noted Pat Moore, MILMEGA’s managing director. “We are encouraged by our customers’ extremely positive feedback on these products from our product launch at the recent IEEE EMC Symposium.”

“MILMEGA’s innovative amplifier designs take full advantage of our technology’s superior bandwidth, power and efficiency,” stated Jim Milligan, Cree business area manager for wireless products.

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