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RF applications will follow the 3D Interconnect path, once adoption occurs in the digital domain
Dec 22, 2004 10:54 PM 

According to those deeply involved in the development of 3D interconnects in the digital sector, adoption in RF applications will probably follow hard on the heels of 3D interconnect acceptance in the digital sector.

"We expect large cell phone manufacturers to move toward 3D interconnect about 12 to 18 months after 3D adoption begins to take hold in digital applications," says Robert Patti, chief technology officer of Tezzaron Semiconductor Corp. The Naperville, Ill.-based company, one of the pioneers in 3D Interconnect, already has a number of working 3D digital silicon components in its product line.

As Patti points out the problem today is that as we push toward smaller geometries we are inadvertently build things that look like parallel capacitors. A copper wire is typically three to four times higher than it is wide. If you are building in 100-nanometer technology, the wires are going to be 300 to 400 nanometers high. So the distributed capacitance is enormous.

As is true in digital applications, 3D interconnection is also a solution in RF applications since it dramatically shortens wires. It thereby compensates for the deterioration of transmission qualities that would otherwise occur with wire lengths in a non-3D scenario. Patti expands on why cell phones will make the move to 3D interconnect:

"I think that RF circuitry in cell phones—which is a high-volume, low-cost industry—will want to see 3D interconnect mature for a year and one-half in digital applications. But because it will become clear to cell phone manufacturers that reduction in costs will occur for them—actually an increase in yield, in their case—it will add up to a compelling argument for them to make the switch."


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