The products will include blue and green light-emitting diodes (LEDs), power switching devices, and radio frequency (RF) and microwave devices. Applications for these products will include solid-state illumination, power switching, wireless infrastructure and optical storage.

The three-year, $26.9 million Cree-Raytheon program has a potential value of $59.4 million if all program options are exercised. Of this amount, the program award contemplates that $11 million will be subcontracted to Cree for the three-year effort, and $24.5 million in total, if all of the options are exercised.

Cree began developing GaN-on-silicon carbide (SiC) RF devices in 1996. The semiconductor work for this program will be conducted at the Raytheon RF components foundry in Andover, Mass. and the Cree Wide-Bandgap MMIC foundry in Durham, North Carolina—as well as the Cree Santa Barbara Technology Center in Goleta, Calif.

RSS    Save to Del.icio.us  Digg This