Gallium nitride on silicon (GaN-on-Si) RF power transistor manufacturer Nitronex continues to expand its design engineering team. Last month, the company named Thomas A. Winslow as principal MMIC engineer. This week it hired Robert A. Sadler as principal engineer. Sadler brings more than 27 years of industry experience in compound semiconductor device and process engineering. "Nitronex is the only fully-qualified supplier of GaN-on-Si RF power transistors. They are positioned to combine the high performance of GaN technology with low-cost silicon substrates to achieve new levels of affordability for high-voltage RF power," stated Sadler. "I am excited to employ my previous experience with GaN technology to further the development of these products and processes at Nitronex."

Most recently, Sadler served as technical director, devices, for Northrop Grumman Corporation, where he was responsible for the development of GaN technology. He also previously worked at RF Micro Devices as a principal scientist responsible for the initial pilot production of GaN power transistors.

Sadler is a senior member of the IEEE and a permanent member of the IEEE Electron Device Society and Microwave Theory & Techniques Society. He holds 11 U.S. patents on compound semiconductor devices and processes.

"Sadler's substantial gallium nitride and silicon carbide product and technology development experience is a great asset to Nitronex as we continue to further enhance our GaN technology for commercial and military RF Power applications," said Kevin Linthicum, chief technology officer.

Sadler received his doctorate from Cornell University, and his masters and undergraduate degrees from North Carolina State University.

www.nitronex.com

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