Jazz Semiconductor, an independent semiconductor wafer foundry, has announced the availability of process design kits for its SBL13 process, a 0.13 μm silicon germanium (SiGe) BiCMOS technology combining high-performance, low-cost SiGe transistors with its low-power (1.2 V), 0.13 μm digital CMOS platform, CA13. The process also includes a suite of high-density passive elements for more aggressive scaling of analog device area in complex analog system-on-a-chip (Analog SoC). The Jazz SBL13 process technology enables the design of cost-effective and highly integrated circuits for most wireless applications that require the combination of dense digital logic with high-performance RF and analog functionality. Examples of products that can take advantage of the SBL13 process include mobile TV tuners, cellular transceivers and WLAN transceivers.

In addition to the low-cost bipolars, the process includes a stacked MIM capacitor for aggressive scaling of capacitance area and a thick top metal for inductor performance.

SBL13 uses a 1.2 V/3.3 V dual gate oxide process to form the base CMOS, with the addition of SiGe transistors offering a range of Ft, Fmax, and BVceo for design flexibility, with an Ft up to 90 GHz, Fmax up to 123 GHz and BVceo up to 6 V. The process also supports up to six layers of aluminum metal, a 5.6 fF/µm² linear MIM capacitor, a triple well module, N-well resistor and unsilicided poly resistor. The top metal is 2.8 μm thick aluminum to support high-Q inductors. The technology is offered through Jazz Semiconductor’s integrated design environment supporting the latest EDA tools and flows for fast and accurate design cycles of RF, analog and mixed-signal products.