Next month at the IEEE MTT-S International Microwave Symposium in Atlanta, Georgia, NXP Semiconductors will demonstrate the performance of seventh generation (Gen7) LDMOS technology. Plus, the manufacturer will display the first product using this technology, the BLC7G22L(S)-130 base station power transistor, which is optimized for high power use and Doherty amplifier applications.

According to NXP, by comparison to the previous generation, Gen7 LDMOS technology increases power density by 20% and improves power efficiency by 2%, while reducing the thermal resistance Rth by over 25% percent.

“As mobile operators start to offer ultra-fast services based on technologies such as HSDPA and LTE, power demands on the wireless network infrastructure are reaching unprecedented levels. Using Gen7 LDMOS technology, NXP now offers the highest performance LDMOS base station transistors in the industry, enabling higher power-added efficiency than any product on the market,” said Mark Murphy, marketing group manager, RF power product line, NXP Semiconductors.

The Gen7 LDMOS delivers record performance up to 3.8 GHz, and offers 25% lower output capacitance, enabling wideband output matching and leading to simplified, better performing Doherty amplifier designs, stated NXP. Doherty has emerged as the amplifier architecture of choice for new base station transmitters, helping wireless network operators to increase efficiency and reduce operating costs, added NXP.

Engineering samples of the BLC7G22L(S)-130 will be available in the third quarter of 2008, NXP said. Additional products based on NXP Gen7 LDMOS technology are expected to be released next year.

www.nxp.com