The GVA line of monolithic surface-mount RF/microwave amplifiers includes models with different gain levels from DC to 6 GHz. Based on high-performance InGaP heterojunction-bipolar-transistor (HBT) technology, the broadband amplifiers can be specified across the DC-to-6-GHz band with gain from 10 to 24 dB at 1 GHz. The provide better than +29 dBm output power at 1-dB compression at 1 GHz, with typical IP3 performance as high as +41 dBm at 1 GHz. The compact amplifiers, which feature built-in ESD protection, are supplied in RoHS-compliant SOT-89 housings. They are unconditionally stable and run on a single +5-VDC supply.

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