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SiGe-based PA sets new benchmark Mar 4, 2004 12:00 PM By RF Design Staff
Leveraging advances in SiGe process technology, SiGe Semiconductor has readied a new power amplifier for cellular handsets that is compliant to the WCDMA standard. The RangeCharger SE5120 delivers benchmark levels of integration and performance, allowing designs of 3G cellular handsets with higher signal quality, smaller form factors and reduced cost, said the maker. Operating in the 1920-1980 MHz band, the power amplifier is the first new cellular amplifier to be implemented in the SiGe biCMOS process. It will be produced by IBM under a foundry agreement inked between the two companies early last year. According to SiGe Semiconductor, SiGe biCMOS process allows the silicon-based power amplifier to match the performance level of GaAs at the cost of silicon. Consequently, the use of the SiGe process has permitted the company to integrate the power amplifier, regulator, matching circuitry and optional power detector on a single chip--and house it in an industry-standard 8-pin QFN package measuring just 3 mm x 3 mm x 0.9 mm. This is the highest level of functional integration of any linear power amplifier on the market, claims the manufacturer. By eliminating requirements for the external switch, regulator, isolator and detector, the SE5120 can reduce the cost of the system bill of materials by as much as $2.80. “The SE5120 is a striking example of how we’ve passed integration, low cost and performance advantages of the SiGe biCMOS process on to our customers,” said Jose Harrison, product line manager, cellular, SiGe Semiconductor. “Other silicon-based CDMA power amplifiers have hit the market. However, they are not commercially viable, since they are generally large and hence do not enable the cost advantages of silicon to be realized. The SE5120 not only solves these challenges, but also meets the linearity, power added efficiency and ruggedness required to ensure high performance, longer talk time and reliability.” In essence, the SE5120 is a single-band, three-stage power amplifier with high linearity and efficiency. The power amplifier achieves peak output power of +28 dBm in WCDMA operation with linearity of -38 dBc and power added efficiency exceeding 40%. With integrated biasing and gain control circuitry, as well as on-chip electrostatic discharge and load mismatch protection circuitry, the SE5120 ensures reliable performance. To extend battery life, the new power amplifier offers separate power supply pins to the control circuits and the power amplifier cells. This allows designers to regulate the amplifier's VCC and improve efficiency at low power levels. Plus, it offers a sleep mode with a low standby current of two microamperes. It is priced at $1.50 in 100k unit quantities. For more information, go to www.sige.com.
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