Using Jazz Semiconductor's 0.18 micron silicon radio platform, China’s Hangzhou Sicomm RF Technology, Inc. (Sicomm) has developed a high gain and high efficiency power amplifier (PA) chip series, SRT3600. According to Jazz, the SRT3600 series of chips offers high performance in CW or FM signal amplification, especially for 400 MHz to 470 MHz band. Recently announced 0.18-micron silicon radio platform uses a high-power CMOS module that is tailored for highly integrated products that require higher breakdown voltages and high density CMOS. It includes options such as high density MIM capacitors, resistors and thick power metal. Plus, it also offers an SOI option for integration of the antenna switch, as per the release.

The SRT3600 power amplifier chip series is aimed at applications like dual-mode walkie-talkies, family radio service (FRS) and general mobile radio service (GMRS), commercial and consumer systems, portable battery-powered equipment, and long distance remote control.

Key features of the amplifiers include single 3.6 V to 6 V supply voltage, 400 MHz to 470 MHz operation frequency, 39 dB power gain, 36 dBm output power at 6 V, and 60% power added efficiency (PAE). Their output match is implemented on printed circuit board and can be easily adjusted to obtain optimum power and efficiency characteristics, according to the developer. The devices are packaged in small plastic QFN packages.

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