Xpedion Design Systems, Inc. has validated the first native PSP implementation within a commercially available simulator. PSP is the latest and most advanced compact MOSFET model that is enabled by dramatic advances in MOS device physics and modeling from a collaboration of Pennsylvania State University and Philips Research. The PSP model is the best example of surface potential based MOS models focusing on physical correctness enabling increased accuracy in simulation and characterization.

The PSP model is well suited for RF applications because it incorporates all small-geometry and stress effects found in the best compact models while being fully symmetric and non-singular. Passive mixers, for example, are sensitive to singularities at zero drain bias and make simulating IM3 difficult with previous models. Additionally, the PSP model includes the most complete noise model, including velocity saturation and channel-induced drain noise. PSP also offers the most complete non-quasi-static (NQS) model available for accurate simulation of RF and large-signal transient analysis and offers the most accurate reproduction of higher order harmonics in the drain current.