Toshiba America Electronic Components' (TAEC) has released a low-profile gallium arsenide (GaAs), MESFET single-pole dual throw (SPDT) switch that is suited for use in multiband and multimode cellular antenna switch modules (ASMs), Bluetooth (BT) modules and Wireless LAN (WLAN) applications. The TG2217CTB SPDT switch is offered in a small and low-profile leadless 6-pin CSP package. The device operates from DC to 3 GHz, requiring two control positive voltages also acting as bias supply. The control voltages are low, and 2.4 V switching operation is possible. This GaAs MESFET monolithic microwave integrated circuit (MMIC) features 0.35 dB insertion loss at 1GHz (0.40 dB at 2 GHz) and 24 dB isolation at 1 and 2 GHz. Power handling performance is 17 dBm P1dB at 2.5 GHz, which is good for the small and low-profile package.

Sampling now, it is priced at $0.20 each. Volume production is scheduled to begin in first quarter of 2005, when production pricing will become available. To improve cost-effectiveness, Toshiba's new efficient, chip-scale package (CSP) mass production line will be used to manufacture this device.