The prophecy of Gordon Moore has been true since the mid-1960s and is expected to continue through the nanometer era as indicated by the papers that will be presented at this year's IEEE International Electron Devices Meeting (IEDM) in Washington, DC, Dec. 11-13. The past few generations have shown that scaling continues unabated. Today, 90 nm CMOS circuits are in production, and 65 nm node under development with efforts to migrate to 45 nm. In fact, a short course at the forum will focus on the challenges of migrating to 32 nm node. From FET architecture and device performance elements to lithography and interconnects, this workshop will investigate innovations that will drive this trend toward 32 nm technology. But, first the hurdles to 45 nm must be overcome. Several papers will describe low-power 45 nm processes for wireless multimedia and consumer electronics applications, where power consumption is a major concern. Along with lithography challenges, these papers will also explore low-k dielectric materials as well as advanced copper interconnects up to 10 metal layers.

Transistors and other active devices are built first on chips, and the interconnect is built afterward, at the back end of the manufacturing line (BEOL). Researchers from the IBM-AMD-Sony-Toshiba alliance will describe a complete BEOL process for the 45 nm technology generation, including reliability data for various chip/package combinations. The process integrates up to 10 copper wiring levels and an ultralow-k porous SiCOH dielectric (k=2.4). Chemical-mechanical polishing can be performed directly on this dielectric without damaging it, addressing a major BEOL concern. The researchers say the technology is the first successful implementation of copper and ultralow-k dielectric material to meet reliability qualification criteria.

Besides advances in low-power, high-speed nanometer CMOS transistors and processes, the 52^nd IEDM will present breakthroughs in bioelectronics, novel power sources and nano-devices. Some innovative developments include a plastic sheet that powers electronic objects placed upon it, a dense plastic memory, a tiny radioisotope-based generator that can power sensor “motes” for decades, and a host of clever ideas combining biology and electronics.

“This year's IEDM will include reports on state-of-the-art results from major semiconductor manufacturers and research institutions around the world, continuing our tradition of offering the highest-quality work” said Vivek Subramanian, IEDM 2006 publicity chair and associate professor, Electrical Engineering and Computer Sciences, University of California at Berkeley. “Furthermore, reflecting increased interest in the new frontiers of engineering at the interfaces of biology and chemistry, this year we will have several presentations from leading researchers in the areas of biosensors, nano devices, and self-assembling systems. This fusion of cutting-edge scientific research and leading industrial innovations allows the IEDM to provide an excellent snapshot of the semiconductor industry today, tomorrow, and in the far-reaching future.”

Some 230 papers by researchers from corporate, university and government labs worldwide will shed light on recent progress and future challenges facing the next generation of semiconductor and other emerging technologies. Plus, it offers stimulating and enlightening invited plenary talks and invigorating evening panel debates. The IEDM 2006 will open with three invited plenary talks. They are “New Paradigms in Silicon Industry, Business and Technology,” by C.G. Hwang of Samsung Electronics Co., Ltd.; “The Analog Challenge of Nanometer CMOS,” by Maarten Vertregt of Philips; and “Wireless Integrated Microsystems: Coming Breakthroughs in Health Care,” by Kensall Wise of the University of Michigan.

Speaking of wireless integrated microsystems, merging micropower circuits, wireless interfaces, hermetic wafer-level packaging, and MEMS, are poised to provide real breakthroughs in health care. While wearable monitors will transform patient monitoring, revolutionary advances will come from implantable devices, according to Wise.

And, there will be two evening panel sessions. The one organized and moderated by Stefan Lai of Intel, deals with the question, “Will NAND Flash Replace Logic to be the Technology Driver for the Semiconductor Industry?” Another, organized and moderated by Clement Wann of IBM, will tackle “Who Will Solve the Variability Challenge?”