Hsinchu, Taiwan-based semiconductor foundry service provider UMC and Singapore's Institute of Microelectronics (IME) have inked a deal to jointly develop radio frequency (RF) modeling solutions for 90 nm technologies. The cooperation will result in the development of methodologies that are applicable for advanced technologies at 90 nm and beyond.

The newly formed joint development program encompasses two areas of research: high-frequency noise characterization and modeling for RF applications at nanometer process technologies, as well as circuit modeling verification and validation flow development based on IME's RF circuits and tests. Progress in these areas will help facilitate the development of a mixed-mode RF circuit and a modeling validation methodology for advanced system-on-a-chip (SoC) designs. According to the developers, these advances will accelerate design-in and reduce risks for users developing SoCs that incorporate RF functions for wireless applications like 3G, WLAN and Bluetooth.

“Advanced noise model development along with proven sample circuit verification flows are crucial for RF SoC development at 90 nm and below,” said S C Chien, vice president of UMC's Central Research and Development division. “IME's extensive knowledge and design experience with mixed-mode RF circuits will allow us to create high-quality, accurate modeling solutions for issues such as thermal noise, and to help ensure accurate design-in for those customers wishing to develop advanced RF SoCs using UMC's most sophisticated technologies.”

The joint efforts will take place at UMC's 300 mm Fab 12i in Singapore. Fab 12i was Singapore's first 300 mm fab, and features advanced automation systems and equipment such as state-of-the-art single wafer processing. The partnership will give IME access to Fab 12i's facilities and resources.

For more information, visit www.umc.com.

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