GaN HEMTs are ready for production
Oct 1, 2006
High-performance RF power transistor supplier Nitronex announced at the WiMAX World that its GaN-on-silicon manufacturing process with 0.5 micron lithography...
Improved InGaP/GaAs HBT technology facilitates high linearity PAs
Oct 1, 2006
By Nan-Lei Larry Wang This article reports on the improvement in a
recently developed InGaP/GaAs HBT for 24 V to 28 V linear PA operation. Key
improvements include adjacent-channel leakage ratio under WCDMA modulation,
ruggedness to sustain high VSWR, and reliability....
Mobile application reference design accelerates development
Oct 1, 2006
By Ron Stieger and David Brooke Market requirements for consumer product categories such as smart phones, portable media devices and personal navigators demand increasing battery lives, shrinking product packages, and decreasing price points. Embedded designers need to seek innovative approaches to meet these requirements....
Product Focus September 2006: Active Components
Sep 1, 2006
UHF RFID oscillator Z-Communications' lead-free, RoHS compliant oscillator (SLV0868C-LF) in UHF band (864-870 MHz) features extraordinary low phase noise...
High-power gallium nitride transistors inch forward
Jun 1, 2006
Ashok Bindra, Editorial Director Slowly, but steadily, gallium nitride (GaN) power transistors are moving forward. Every year the progress report looks better and commercial viability...
High-performance active mixer overcomes RF transmitter design challenges
Jan 1, 2006
By James Wong A new generation of high-performance active mixers like LT5521 offers a combination of high linearity, low noise, easy LO drive, and with little or no conversion loss, resulting in a cost-effective, high-performance solution....
Phase-Noise Profiles Aid System Testing
Nov 1, 2005
By Ken Yang Engineers normally try to
minimize phase noise, but for test purposes, they sometimes
worsen the phase noise intentionally. The deliberate introduction of phase noise
aids in testing a system's tolerance for phase noise or jitter....
AC parameters as they affect LDO performance in RF devices
Sep 1, 2005
By John McGinty Many AC parameters affect RF system performance including transient response, power supply ripple rejection and self noise. Power supply ripple rejection,...
Digital step attenuators offer precision and linearity
Aug 1, 2005
By Radha Krishna Setty Super RF CMOS process technology has been used to develop digital step attenuators that offer an unprecedented combination of accuracy, linearity, programmability, ESD tolerance and wide bandwidth in a miniature surface-mount package....
Downconversion mixer for VLIF receivers taps BiFET technology
Jun 1, 2005
By Wei Jin, Yongsheng Xu and Zongsheng Lai A novel bipolar/MOSFET mixer configuration for the very low intermediate
frequency receivers has a topology that merges the high performance of
the bipolar at RF with the high linearity of the MOSFET. This fully integrated
downconversion mixer has conversion gain of 18.23 dB, IIP2 of 30.8 dBm and
noise figure of 9.54 dB when input frequency is 868 MHz and IF is 270 kHz....
Active downconverting RF mixer offers high linearity
Apr 1, 2005
Optimized to offer high linearity and wide dynamic range, Linear Technology's active downconverting RF mixer LT5527 brings a high level of integration...
Active mixer resolves passive issues
Aug 1, 2004
While ultra-high frequency (UHF) and microwave passive mixers are known to deliver high linearity and signal-to-noise ratio performance, they require...
Optimizing LDMOS transistors' bias control
Jan 1, 2004
By Jim Pflasterer, director of applications engineering, Xicor Milpitas, CA LDMOS transistors are used for RF power amplification in numerous communications applications, with the most popular being cellular base stations. These...
